“…The stress–voltage coupling effect has been effectively harnessed to suppress the c -Li 15 Si 4 phase through the application of adhesive layers on thin films and capping layers on a variety of silicon morphologies, ,,,,, as well as alloying silicon with inactive transition metals. ,,− The hypothesis that alloying induces stress, thereby improving capacity retention by suppressing c -Li 15 Si 4 , has been applied to nano- and micron-sized silicon particle electrodes as well as thin films. ,, However, most, if not all previous studies that find a correlation between the suppression of c -Li 15 Si 4 formation and capacity retention, achieve this suppression through material changes that are convoluted with other beneficial effects. For instance, a capping layer on top of a Si film can induce clamping, thereby preventing c -Li 15 Si 4 by aforementioned stress–voltage coupling, while also minimizing reactivity with the electrolyte. ,− Prolonged ball-milling of Si with Mo and W, for instance, increases the proportion of silicide intermetallic and allegedly induces stress, but this processing also reduces the grain size of Si, , rendering its distribution more homogeneous. Rather than suppressing c -Li 15 Si 4 formation by changing the electrode material, a test of the intrinsic effects of c -Li 15 Si 4 on capacity retention would, ideally, involve inducing or preventing its formation by adjusting only the experimental conditions while keeping the electrode material constant.…”