Synthesis, formation mechanism and photoelectric properties of GeS nanosheets and nanowires

Abstract

Single‐crystalline GeS nanosheets and nanowires have been selectively synthesized by simply varying the reaction conditions via a convenient wet chemical approach. The formation mechanism of the nanosheets and nanowires has been proposed. The results from time‐dependent reactions proved that the GeS nanowires were formed by a rolling‐up mechanism. Films made of as‐synthesized GeS nanosheets and nanowires were found to have an outstanding photoelectric response, suggesting their potential in solar energy applications. The structure, morphology, composition and optical absorption properties of the as‐prepared samples were characterized using X‐ray powder diffraction, transmission electron microscopy, energy‐dispersive X‐ray spectrometry and scanning electron microscopy.

Recent Advances in 2D Metal Monochalcogenides

“…The typical physical properties of the MMCs reported to date are presented in Table 1. [62][63][64][65][66][67][68][69][70][71][72] The exotic physics of 2D materials is usually associated with crystal structural symmetry breaking. In particular, 2D graphene has highest symmetry of D 6h , which has sixfold rotation (inplane), six two-fold perpendicular axis, and a mirror plane.…”

Фотопорог слоистого кристалла alpha-GeS: расчет из первых принципов

“…Изготовление наноструктур на основе GeS может еще более расширить возможности практического применения данного материала. Изго-товленные из GeS нанослои и нанопроволоки демон-стрируют выдающуюся фоточувствительность [1], что указывает на возможное использование их в системах преобразования солнечной энергии, например при изго-товлении фотовольтаических устройств.…”

Germanium Xanthates: Versatile Precursors for Photo Responsive Germanium Sulfide Nanostructures

“…Germanium sulfide (GeS), a p‐type semiconductor, adopts a 2‐D layered structure with closely spaced indirect and direct band gap falling in the range of 1.54‐1.65 eV . These properties make it a candidate of choice for photovoltaic, photo detector devices and lithium ion battery applications.…”

“…There are only a few reports dealing with the synthesis of GeS nanostructures. These include vapour deposition of GeS, reactions of either GeI 4 with 1‐dodecanethiol or GeCl 2 .dioxane with thiourea in a high boiling solvent, and photolysis of tetramethylgermanium and H 2 S followed by annealing at 350 °C . Recently we have successfully employed single source molecular precursors for the preparation of tin and lead chalcogenide nanostructures .…”