Synthesis, characterization, and electrical properties of CuInGaSe2/SiO2/n-Si structure

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The structure of carbon nanotube CNTs functioning as p-type material deposited over n-type silicon to produce heterojunction of Au/CNTs/n-Si/Al is presented in this study. This work explored the capacitance and conductance at various frequencies, temperatures, and voltages, the novelty here is that negative capacitance and conductance were observed at high frequencies in all temperatures and voltages, whereas capacitance appeared at both high and low frequencies, such as (2 × 107,1× 107,1 × 102,10) Hz. At high-frequency f = 2 × 107 Hz, the capacitance raises while the conductance decreases; at all temperatures and voltages, the capacitance and conductance exhibit the same behavior at particular frequencies such as 1 × 106,1 × 105,1 × 104,1 × 103 Hz, however their behavior differs at 2 × 107,1 × 107, 1 × 102 and 10 Hz. Investigating the reverse square capacitance with voltage yielded the energy Fermi (Ef), density surface of states (Nss), depletion width (Wd), barrier height, series resistance, and donor concentration (Nd).

Section: Resultsmentioning

confidence: 76%

“…Several parameters can be extracted from the C −2 -V plot according to Eq. 1 as N d , Fermi levels (E f ), maximum electric field (E m ), depletion layer width (W d ), N ss , R s , and Φ b(C-V) 40,44 as summarized in Table I.…”

Section: Resultsmentioning

confidence: 99%

Novel Negative Capacitance and Conductance in All Temperatures and Voltages of Au/CNTs/n-Si/Al at Low and High Frequencies

Ashery¹,

Gad²,

Gaballah³

et al. 2021

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“…24,42 For example, the temperature is increased the location of the new dipoles is altered, which improves the strength of the phase polarity and then, the values of ε′ and ε′′ increase. [43][44][45][46][47][48][49][50] Also, the frequency reliance of dielectric constants is possible to be related to the presence of an interfacial surface on the side of the conductor film border.…”

Section: Resultsmentioning

confidence: 99%

“…14a-14e). At low frequencies, the dielectric loss tangent (tanδ) yields relaxation peaks with positive and negative values, from lnf (6-16) tanδ has positive values, and 37,[48][49][50][51][52][53] and the dispersion in the curves of ε′, ε″ and tanδ attributed to the series resistance R s . [54][55][56][57][58] Figures 15a-a′…”

Section: Resultsmentioning

confidence: 99%

Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

Ashery¹,

Gad²,

Turky³

et al. 2022

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The structure of carbon nanotubes behaves as a p-type semiconductor deposited on the n-silicon wafer formed P-N junction was investigated. This structure of Au/CNTs/n-Si/Al has novel electric and dielectric properties such as high rectification ratio, low dielectric loss tangent, and high dielectric loss (ɛ'), which increases with declines frequency reaches to 4x104 in the positive direction of dielectric constant at a frequency equals 100 Hz and reaches to -1x106 in the negative region of dielectric constant at frequency 10 Hz. The dielectric loss tangent (tanδ) has low values which are raised with a decline in frequencies, causing their values to fluctuate from 0.15 to 0. 20. The ɛ' and tanδ have negative values at high and low frequencies, though the ɛ' has positive values at mid frequencies. The electrical properties of this device were investigated by studying I-V, Cheung, dv/dlnI, and Norde characterization. The parameters such as rectification ratio (RR), the resistance of junction (Rj), barrier height (ɸb), and ideality factor were calculated.

“…This experiential performance can likewise be clarified based on variations in border states, anywhere the charges in the border states cannot track irregular current signs at high frequencies. [27][28][29][30][31][32] Figures 3a-3e series resistance vs temperature at different frequencies and voltages of Au/CNTS/n-Si/Al structure. As shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

Negative Series Resistance (R_s) and Real Part of Impedance (Z′), and Positive and Negative Imaginary Part of Impedance (Z″) at a High Frequency of Au/CNTS/n-Si/Al Structure

Ashery¹,

Gad²,

Turky³

2022

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We present negative values for series resistance (Rs), the negative real part of impedance (Z'), showing that the positive and negative values of the imaginary part of impedance (Z'') seemed at high frequency for all voltages, temperatures, and frequencies of Au/CNTS/n-Si/Al. At all frequencies the Rs has positive values, increasing with decreasing frequencies except at 2 x 107Hz, where Rs has negative values of about -5200Ω. At f = 2 x 107Hz, Z' has negative values, reaching - 0.5 Ω, and at other frequencies the Z' has positive values, showing growth with decreasing frequency. The Z'' has positive values at frequencies of 2x 107,1 x 107,1 x 103,1 x 102 Hz, while at frequencies of 1 x 106,1 x 105,1 x 104) Hz the Z'' has negative values. At high frequencies, the assembly Au/CNTS/n-Si/Al behaves as a tunneling diode with negative resistance. At other frequencies this structure Au/CNTS/n-Si/Al behaves as a normal diode, and negative resistance disappears. This structure Au/CNTS/n-Si/Al is applied as tunneling diode at high frequency and a normal diode by changing frequencies. The electrical properties and conduction mechanism of this structure were investigated.