RESUME:Pour resoudre le phenomene de gonflement qui limite la resolution des rtsines microlithographiques classiques, nous nous sommes intCressCs a de nouvelles rCsines avec lesquelles ce phCnomtne n'apparait pas. Nous avons retenu pour notre Ctude les resines R qui renferment en mClange un polymere porteur de radicaux tCtrathiafulvalCnylcarbonyloxymtthyles et le dibromotCtrachloroCthane. Afin de voir l'influence de la nature du radical porteur de l'unite tetrathiafulvalene dans le polymtre sur les propriCtCs microlithographiques des resines R, nous nous sommes Cgalement intCressCs aux polymeres renfermant des radicaux tCtrathiafulvalCnylphCnoxymCthyles. Les rtsines R ont Ct C testCes sous irradiation Clectronique. Leurs sensibilitts dCpendent en outre de la valeur de la masse molaire du polymere. Des rCsolutions comprises entre 0,l et 0,4 pm ont Ct C obtenues. Ce type de rCsines possedent un certain nombre de proprietes intbressantes telles que des sensibilitks ClevCes et de bonnes rCsolutions.
SUMMARYIn order to solve the polymer swelling which limits the resolution for negative resists, new resists (R) including polymers containing the tetrathiafulvalenylcarbonyloxymethyl radical and dibromotetrachloroethane were developed where the swelling does not appear. In order to study the influence of the nature of the radical bearing the tetrathiafulvalene unit in the polymers upon the microlithographic properties of the R resists, polymers containing the tetrathiafulvalenylphenoxymethyl radical were also studied. The resists have been tested under electron beam irradiation. The dependence of resist sensitivity on molecular weight is reported. Resolutions between 0,l and 0,4 pm were obtained. These resists are shown to have a desirable combination of properties, including high sensitivity and high resolution.
