Synthesis and structural characterization of SiBOC ceramic fibers derived from single-source polyborosiloxane

Bai, Hongwei; Wen, Guangwu; Xu, Huan; Han, Zhaoxiang; Zhong, Bo; Hu, Zhaocai; Zhang, X.D.

doi:10.1016/j.jeurceramsoc.2010.11.020

Cited by 58 publications

(25 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the one hand, this could be interpreted as an Si-B bond. The peak matched known Si-B bond values of ~102 eV, 34 and the -0.16 eV shift of the peak relative to the control could be attributed to the lower electronegativity of B relative to O. Additionally, the higher % Si 2p area of this peak in the sample(16.4%) versus the control (14.1%), suggested that the sample peak is a combination of SiO2 and Si-B species. On the other hand, this small shift could also be attributed to differences in chemistry of neighboring species 35 , in other words, the presence of other species on the surface from introducing the B2Pin2 could have affected the oxide position.…”

Section: Resultssupporting

confidence: 56%

“…32,33 The XPS B 1s region did not elucidate the B attachment, since regardless of surface attachment (Si-B-O or Si-O-B), the B is attached to an O species. 34 We also used the B region to assess if the pinacol group enhanced the stability of the B. After 8 days in ambient storage, B-O was no longer visible, indicating the pinacol group did not significantly stabilize the B (See SI Figure 1).…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Reaction of Bis(pinacolato)diboron with H-Si(100): The Pursuit of On-surface Hydrosilane Borylation Reactions

Frederick

Kolesnichenko²,

Campbell³

et al. 2021

Preprint

View full text Add to dashboard Cite

On-surface solution phase chemical reactions, which are inherently amenable to scale-up, provide a pathway towards overcoming challenges present in gas phase processes for ultradoping of Si, a process that introduces unprecedented concentration of dopant. Ultradoping, which can only be achieved with a direct chemical bond between dopant and Si, fundamentally changes the electronic properties of Si, making it a promising next-generation electronic material. Traditional processes for solvent-based chemical functionalization attach species to the Si surface through carbon or oxygen linkers, which limits activated dopant density. This prevents solution phase chemistry from being useful for applications involving ultradoped Si. Recent work has focused on forming a direct on-surface Si-dopant bond to provide a scalable ultra-doping pathway. In this work, we expand upon that goal by demonstrating that well-known homogeneous chemistries can be usefully applied to surface reactions for ultradoping Si. By adapting a hydrosilane borylation reaction used to synthesize silyl boranes into a surface chemistry reaction, we successfully incorporate 1.3e14 cm-2 B using scalable on-surface solvent based chemistry. This density is high enough to produce the overlap of dopant wavefunctions required for achieving unprecedented conductivity in Si. Using computational studies, performed with the assumption that catalyst interaction was negligible, we predict the reaction straightforwardly occurs through a Si-B bond. However, with extensive experimental characterization including infrared spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy we elucidate cross-reactivity between the substrate, B2Pin2 and catalyst. The reaction complexity indicates that radical initiating catalysts are not benign in surface chemistry systems.

show abstract

Section: Resultssupporting

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Reaction of Bis(pinacolato)diboron with H-Si(100): The Pursuit of On-surface Hydrosilane Borylation Reactions

Frederick

Kolesnichenko²,

Campbell³

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…In the control, where no B was expected, this higher energy peak was unambiguously assigned to the SiO 2 species. In the sample, the 102.39 eV peak matched known SiÀ B bond values of~102 eV, [16] and the À 0.16 eV shift of the peak relative to the control could be attributed to the lower electronegativity of B relative to O. Additionally, the higher % Si 2p area of this peak in the sample(16.4 %) versus the control (14.1 %), suggested that the sample peak is a combination of SiO 2 and SiÀ B species. However, this small shift could also be attributed to differences in chemistry of neighboring species, in other words, the presence of other species on the surface from introducing the B 2 Pin 2 could affect the oxide position.…”

mentioning

confidence: 54%

“…While the B 1s peak further confirmed the B was present only in the sample, it could not be used to confirm direct BÀ Si attachment, since regardless of surface attachment (SiÀ BÀ O or SÀ OÀ B), the B is attached to an O species. [16] To further investigate the B attachment, we analyzed the Si 2p regions of both the sample and a control sample, where the control sample was run under the same conditions with only AIBN and solvent present (Figure 6). We performed additional calibration to align the Si 2p 3/2 peaks to the same value (99.02 eV).…”

mentioning

confidence: 99%

Ultradoping Boron on Si(100) via Solvothermal Chemistry**

Frederick

Campbell

Kolesnichenko

et al. 2021

Chemistry A European J

View full text Add to dashboard Cite

Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next-generation electronic material. Commercialization of ultradoping is currently limited by gas-phase ultra-high vacuum requirements. Solvothermal chemistry is amenable to scale-up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant-Si surface reactions are not well-developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (~1e14 cm 2 ) by using a solvothermal process. Surface characterizations indicate the catalyst cross-reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct BÀ Si surface bonds. This proof-of-principle work lays groundwork for emerging solvothermal ultradoping processes.

show abstract

“…22,24 More recently papers dealing with the synthesis of silicon(boron)oxycarbide fibers have also been published. 25,26 Boron addition to ternary SiCN polymer-derived ceramics -which is the non-oxide analog of SiOC-is known to increase the high temperature stability up to 2000°C 27 and Si(B)CN fibers have been also reported in the literature. 28,29 Boron addition to ternary SiOC glasses has been found to decrease the thermodynamic stability of the SiBOC system with respect to the crystalline components 30 and to promote the phase separation and formation of nanocrystalline of SiC; 31 however, B addition to SiOC does not affect the hightemperature decomposition process 32,33 -which occurs with evolution of gaseous CO/SiO-most probably because it is not a thermodynamically driven, but a kinetically controlled phenomenon.…”

mentioning

confidence: 99%

Processing, Mechanical Characterization, and Alkali Resistance of SiliconBoronOxycarbide (SiBOC) Glass Fibers

et al. 2014

View full text Add to dashboard Cite

A borosilicate sol-gel solution is synthesized using a mixture of methyltriethoxysilane, dimethyldiethoxysilane, and boric acid. SiBOC gel fibers are produced from the as-synthesized sol-gel solution using a spinning apparatus. Subsequently, SiBOC glass fibers are prepared through pyrolysis under argon atmosphere at 1000°C and 1200°C. Mechanical properties of the SiBOC glass fibers are studied by measuring the tensile strength and the elastic modulus. The results show a high tensile strength -1300 and 1058 MPa, and a high Young modulus -79 and 95.5 GPa, for the fibers prepared at 1000°C and 1200°C, respectively. Furthermore, alkali resistance of the SiB-OC fibers is investigated by measuring the tensile strength after soaking them for 20 h in NaOH and Ca(OH) 2 solutions at 100°C. For comparison, the same measurements are performed on commercial AR and E glass fibers. The SiBOC fibers show excellent alkaline resistance and perform better than commercial AR fibers. Indeed, SiBOC fibers retain 80%-90% of the initial strength after Ca(OH) 2 attack.

show abstract

Synthesis and structural characterization of SiBOC ceramic fibers derived from single-source polyborosiloxane

Cited by 58 publications

References 41 publications

Reaction of Bis(pinacolato)diboron with H-Si(100): The Pursuit of On-surface Hydrosilane Borylation Reactions

Reaction of Bis(pinacolato)diboron with H-Si(100): The Pursuit of On-surface Hydrosilane Borylation Reactions

Ultradoping Boron on Si(100) via Solvothermal Chemistry**

Processing, Mechanical Characterization, and Alkali Resistance of SiliconBoronOxycarbide (SiBOC) Glass Fibers

Contact Info

Product

Resources

About