Synthesis and Structural Analysis of Silicon Carbide from Silica Rice Husk and Activated Carbon Using Solid-State Reaction

Mas’udah, Kusuma Wardhani; Diantoro, Markus; Fuad, Abdulloh

doi:10.1088/1742-6596/1093/1/012033

Cited by 18 publications

(16 citation statements)

References 7 publications

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“…In contrast, the homogeneous mixture of AC/SiC can promote the generation of metal phase and ceramic phase. The ratio of ceramic to metal can be well controlled [19][20].…”

Section: Resultsmentioning

confidence: 99%

Realization of Phase and Microstructure Control in Fe/Fe2SiO4-FeAl2O4 Metal-Ceramic by Alternative Microwave Susceptors

Gao¹,

Xu²,

Ruan³

et al. 2022

Preprint

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This study provides a novel method to prepare metal-ceramic composites from magnetically selected iron ore using microwave heating. By introducing three different microwave susceptors (Activated Carbon, SiC, and a mixture of Activated Carbon and SiC) during the microwave process, effective control of the ratio of metallic and ceramic phases has been achieved easily. The effects of the three susceptors on the microstructure of the metal-ceramics and the related reaction mechanisms were also investigated in detail. The results show that the metal phase (Fe) and ceramic phase (Fe2SiO4, FeAl2O4) can be maintained, but the metal phase to ceramic phase changed significantly. In particular, the microstructures appeared as well-distributed nanosheet structures with diameters of ~400 nm and thicknesses of ~20 nm when SiC was used as the microwave susceptor.

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“…In contrast, the homogeneous mixture of AC/SiC can promote the generation of metal phase and ceramic phase. The ratio of ceramic to metal can be well controlled [19][20].…”

Section: Resultsmentioning

confidence: 99%

Realization of Phase and Microstructure Control in Fe/Fe2SiO4-FeAl2O4 Metal-Ceramic by Alternative Microwave Susceptors

Gao¹,

Xu²,

Ruan³

et al. 2022

Preprint

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“…, 2, FOR PEER REVIEW 2 , 6H-, and 4H-SiC structures [4][5][6][7][8]. The 4H-SiC structure has been shown to have several defects and PL peaks in the band gap.…”

Section: Preparation Of Starting Materialsmentioning

confidence: 99%

“…Silicon carbide (SiC) has attracted the attention of many researchers due to its outstanding electrical, mechanical, and thermal properties. SiC has been used in many industries for power devices and optoelectronic applications [1][2][3][4][5][6][7][8]. There are more than 200 polytypes of Si-C, with cubically (3C-SiC) and hexagonally (4H-SiC or 6H-SiC) modified compounds being the most used.…”

Section: Introductionmentioning

confidence: 99%

“…There are more than 200 polytypes of Si-C, with cubically (3C-SiC) and hexagonally (4H-SiC or 6H-SiC) modified compounds being the most used. The differences come from the stacking sequence of the hexagonal structure bonded in the Si-C bilayers [1][2][3][4][5][6][7][8]. The existence of polytypes implies that many different stable atomic arrangements and symmetries can be obtained, including hexagonal, cubic, and rhombohedral arrangements [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Photoluminescence (PL) is a standard method for characterizing the emission properties of semiconductor materials and can provide information about defect-related carrier transport dynamics [8]. Of the few studies reporting the optical properties of SiC, many have looked at the 3C-, 6H-, and 4H-SiC structures [4][5][6][7][8]. The 4H-SiC structure has been shown to have several defects and PL peaks in the band gap.…”

Section: Introductionmentioning

confidence: 99%

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Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

2022

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The structural defect effect of impurities on silicon carbide (SiC) was studied to determine the luminescence properties with temperature-dependent photoluminescence (PL) measurements. Single 4H-SiC crystals were fabricated using three different 3C-SiC starting materials and the physical vapor transport method at a high temperature and 100 Pa in an argon atmosphere. The correlation between the impurity levels and the optical and fluorescent properties was confirmed using Raman spectroscopy, X-ray diffraction, inductively coupled plasma atomic emission spectroscopy (ICP-OES), UV-Vis-NIR spectrophotometry, and PL measurements. The PL intensity was observed in all three single 4H-SiC crystals, with the highest intensities at low temperatures. Two prominent PL emission peaks at 420 and 580 nm were observed at temperatures below 50 K. These emission peaks originated from the impurity concentration due to the incorporation of N, Al, and B in the single 4H-SiC crystals and were supported by ICP-OES. The emission peaks at 420 and 580 nm occurred due to donor–acceptor-pair recombination through the incorporated concentrations of nitrogen, boron, and aluminum in the single 4H-SiC crystals. The results of the present work provide evidence based on the low-temperature PL that the mechanism of PL emission in single 4H-SiC crystals is mainly related to the transitions due to defect concentration.

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Novel Synthesis of SiC-SiO2 Nanotubes from Cinachyrella sp. and Its Improvement of the Corrosion Resistance of Low Carbon Steel in 3.5% NaCl Water Solution

Barghout,

Kashyout,

Ibrahim

et al. 2023

J. of Materi Eng and Perform

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Coat synthesis of silicon carbide and composites of Si derivatives is a challenge for high-quality thin film applications, including corrosion resistance industries. A novel fabrication process of silicon carbide-silicon dioxide nanotube composites (SCDNTs) was developed by a solid reaction of silicon-carbon (marine sponge Cinachyrella sp.) resources. Trimetallic catalyst (Fe/Ni/Zr) supported on different Al2O3 media with heating in an argon flow was used to prepare SCDNTs composite. A higher crystallinity degree of the nanocomposites is attained at a heating temperature of 1200 °C as a suitable starting temperature to have a reasonable degree of crystallinity. XRD analysis of the prepared composite showed the presence of polycrystalline silicon dioxide and two phases of silicon carbide; 3C-SiC and 6H-SiC. TEM analysis showed the presence of silicon carbide's cubic and hexagonal structures embedded into silicon dioxide nanotubes. FTIR analysis confirmed the XRD and TEM analyses through the presence of the functional groups related to Si-Si, Si-O and Si-C. The SCDNTs spin coating process on LWS was optimized at 1000 rpm. Varying thin coatings of up to 5 layers of SCDNTs were prepared low steel substrate to evaluate its corrosion behavior in a 3.5% NaCl solution. Five-layer SCDNTs composite coating on LCS was the favorable coating as obtained from the electrochemical measurements ensured a corrosion inhibition efficiency of 92.5% and corrosion rate of 63.98 mm/y. XRD spectra and stereomicroscope were used to evaluate the surface of LWS coated with SCDNTs before and after corrosion test. Graphical Abstract

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Synthesis and Structural Analysis of Silicon Carbide from Silica Rice Husk and Activated Carbon Using Solid-State Reaction

Cited by 18 publications

References 7 publications

Realization of Phase and Microstructure Control in Fe/Fe<sub>2</sub>SiO<sub>4</sub>-FeAl<sub>2</sub>O<sub>4</sub> Metal-Ceramic by Alternative Microwave Susceptors

Realization of Phase and Microstructure Control in Fe/Fe<sub>2</sub>SiO<sub>4</sub>-FeAl<sub>2</sub>O<sub>4</sub> Metal-Ceramic by Alternative Microwave Susceptors

Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration

Novel Synthesis of SiC-SiO2 Nanotubes from Cinachyrella sp. and Its Improvement of the Corrosion Resistance of Low Carbon Steel in 3.5% NaCl Water Solution

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