2012
DOI: 10.1016/j.ceramint.2012.05.020
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Synthesis and reaction mechanism of Ti3SiC2 ternary compound by carbothermal reduction of TiO2 and SiO2 powder mixtures

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Cited by 17 publications
(9 citation statements)
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“…Taking for example the 18 Ti‐containing phases, generally 1650°C is required for carbon reduction of TiO 2 , a temperature which causes significant vaporization loss of typical A ‐elements and ultimately a poor MAX phase yield in a pressureless reactive sintering environment. Cetinkaya and Eroglu have shown that intensive sample preparation can allow some successful conversion to Ti 3 SiC 2 at 1527°C in a system containing both SiO 2 and TiO 2 , however, yield, scalability and losses are still a major concern. M oxides that have high reduction temperatures (Nb, Zr Ti etc.)…”
Section: Resultsmentioning
confidence: 99%
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“…Taking for example the 18 Ti‐containing phases, generally 1650°C is required for carbon reduction of TiO 2 , a temperature which causes significant vaporization loss of typical A ‐elements and ultimately a poor MAX phase yield in a pressureless reactive sintering environment. Cetinkaya and Eroglu have shown that intensive sample preparation can allow some successful conversion to Ti 3 SiC 2 at 1527°C in a system containing both SiO 2 and TiO 2 , however, yield, scalability and losses are still a major concern. M oxides that have high reduction temperatures (Nb, Zr Ti etc.)…”
Section: Resultsmentioning
confidence: 99%
“…One prior attempt at carbothermal synthesis of a MAX phase has been located in the literature . Therein thermodynamic calculations were used to isolate promising conditions for co‐reduction of TiO 2 and SiO 2 by C leading to formation of Ti 3 SiC 2 .…”
Section: Introductionmentioning
confidence: 99%
“…V 2 GeC MAX phase can also be fabricated by direct CTR of V 2 O 5 . Cetinkayan et al [ 101 ] first reported the synthesis of Ti 3 SiC 2 by CTR using oxide (TiO 2 and SiO 2 ) as precursor. Two different C sources, graphite flakes and pyrolytic C coating, were used to synthesize Ti 3 SiC 2 at 1527 °C under Ar atmosphere.…”
Section: Synthesis Methods Of Maxmentioning
confidence: 99%
“…For instance, it has been demonstrated that due to limited nucleation and growth, single-phase Ti 3 SiC 2 thin film was difficult to form when it was directly deposited on MgO (111) substrate. A TiC (111) seed layer on MgO (111) substrate assisted the formation of epitaxial Ti 3 SiC 2 film that showed an in-plane orientation of Ti 3 SiC 2 [110]//TiC[101]//MgO [101]. [69] The synthesis of many MAX-phase thin films requires deposition temperatures over 600 C or postannealing.…”
Section: Pvdmentioning
confidence: 99%
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