Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides

Yoon, Aram; Lee, Zonghoon

doi:10.9729/am.2017.47.1.19

Cited by 28 publications

(7 citation statements)

References 23 publications

(21 reference statements)

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“…However, practical and stable doping requires "substitution" of a given fraction of the host lattice atoms by the dopant atoms wherein the latter covalently bonds with other atoms in the host lattice. While little progress has been made in the controlled and area-selective "top-down" substitutional doping of MoS 2 (as described in Section 15.4), most substitutional doping efforts on MoS 2 have relied on the incorporation of dopant atoms during the "bottom-up" or in-situ synthetic growth process (e.g., CVD) which may provide controlled, but inevitably unselective, doping of the entire MoS 2 film [169,382,383].…”

Section: Substitutional Doping Of 2d Mosmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

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Section: Substitutional Doping Of 2d Mosmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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“…In H-phase TMDC, hexagonal symmetry can be observed from a top view and X-M-X arrangement is considered to be the monolayer, in which each M atom is covalently bonded to the six X atoms [ 49 ], whereas T-phase has a trigonal arrangement of the chalcogen (X) atoms on the top and shows the hexagonal structure of chalcogen atoms from a top view [ 50 ]. Among both, the 2H phase of 2D TMDCs is stable in air [ 51 ].The stability of mono or few layer TMDC is of the vital importance due to its layer dependent properties [ 52 ]. The conductivity of 1T MoS 2 phase is 10 7 times better than 2H MoS 2 phase [ 53 ].…”

Section: D Materialsmentioning

confidence: 99%

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

2017

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Two-dimensional (2D) materials have attracted extensive interest due to their excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide (TMDC), another kind of 2D material, has a nonzero direct band gap (same charge carrier momentum in valence and conduction band) at monolayer state, promising for the efficient switching devices (e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

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“…Doping levels as high as 15% mean individual dopant atoms cannot be considered isolated, which raises the questions of how they are distributed, how this depends on the growth conditions and synthesis approaches, and how this distribution influences other properties. 18 Our previous studies of alloy TMDCs with atomic-resolution imaging have observed an effectively random distribution of dopants for highly-compatible TM atoms, as in Mo 1−x W x S 2 alloys. 19 Conversely, Azizi et al produced nonrandom and vibrationally anisotropic stripe patterns 20 which run parallel to the edges of the triangular flakes in the Mo 1−x W x S 2 monolayer around 50% doping.…”

Section: Introductionmentioning

confidence: 95%

Strong In-plane Anisotropy in the Electronic Properties of Doped Transition Metal Dichalcogenides exhibited in W1-xNbxS2

Loh,

Xia,

Wilson

et al. 2021

Preprint

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In this work, we study the electronic properties of monolayer transition metal dichalcogenide materials subjected to aliovalent doping, using Nb-doped WS 2 as an exemplar. Scanning transmission electron microscopy imaging of the as-grown samples reveals an anisotropic Nb dopant distribution, prompting our investigation of anisotropy in electronic properties. Through electronic structure calculations on supercells representative of observed structures, we confirm that local Nb-atom distributions are consistent with energetic considerations, although kinetic processes occurring during sample growth must be invoked to explain the overall symmetry-breaking. We perform effective bandstructure and conductivity calculations on realistic models of the material that demonstrate that a high level of anisotropy can be expected in electronic properties including conductivity and mobility.

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Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides

Cited by 28 publications

References 23 publications

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

Strong In-plane Anisotropy in the Electronic Properties of Doped Transition Metal Dichalcogenides exhibited in W1-xNbxS2

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