It
is well-known that grain boundaries (GBs) increase the electrical
resistivity of metals due to their enhanced electron scattering. The
resistivity values of GBs are determined by their atomic structure;
therefore, assessing the local resistivity of GBs is highly significant
for understanding structure–property relationships. So far,
the local electrical characterization of an individual GB has not
received much attention, mainly due to the limited accuracy of the
applied techniques, which were not sensitive enough to detect the
subtle differences in electrical resistivity values of highly symmetric
GBs. Here, we introduce a detailed methodology to probe
in
situ
or
ex situ
the local resistivity of
individual GBs in Cu, a metallic model system we choose due to its
low resistance. Both bulk Cu samples and thin films are investigated,
and different approaches to obtain reliable and accurate resistivity
measurements are described, involving the van der Pauw technique for
macroscopic measurements as well as two different four-point-probe
techniques for local
in situ
measurements performed
inside a scanning electron microscope. The
in situ
contacts are realized with needles accurately positioned by piezodriven
micromanipulators. Resistivity results obtained on coincidence site
lattice GBs (incoherent Σ3 and asymmetric Σ5) are reported
and discussed. In addition, the key experimental details as well as
pitfalls in the measurement of individual GB resistivity are addressed.