Synthesis and Luminescence Properties of AlN Nanowires

Ultraviolet emission from high-quality crystalline ultra-long AlN whiskers

“…An overview of the samples [ Figure 3(a)] reveals that ultra-long AlN whiskers with length up to several millimeters were obtained. The AlN whiskers are about 10-100 times longer than those previously reported (Wu and Liang, 2009;Liu et al, 2010), and this ultra-long length will benefit tailoring and processing of the whiskers in electronic device applications. SEM image with higher magnification [Figure 3(b)] shows that the AlN whiskers are 1-3 µm in diameter, and exhibit smooth surface and good toughness.…”

“…Quasi-1D AlN whiskers or nanowires have been produced by different methods including carbothermal reaction of aluminum oxide (Jung and Joo, 2005), direct nitridation of aluminum powder (Liu et al , 2010), chemical vapor deposition (Wu and Liang, 2009), and silica-assisted catalytic growth method (Tang et al , 2001). Generally, the prepared 1D AlN often exhibit different photoluminescence (PL) characterizations.…”

AlN nanowires: synthesis, physical properties, and nanoelectronics applications

“…To determine the most suitable growth catalyst to be used in the synthesis of high-quality AlN nanowires, Wu et al [43,44] experimented with a large-scale synthesis method based on the catalyst-assisted chemical vapor deposition. The demonstrated technique proved to be simple yet highly efficient.…”

“…Various fabrication methods have been employed to synthesize these nanowires and they may be classified into four main classes: (1) template-confined method [16,[31][32][33], (2) direct current (DC) arc discharge method [34][35][36][37][38], (3) catalyst-assisted vapor-liquid-solid (VLS) growth method [39][40][41][42][43][44][45][46], and (4) catalyst-free vapor-solid (VS) growth method [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63]. Although significant progress in the synthesis of AlN nanowires has been achieved lately, some challenges remain and are expected to be overcome in the near future.…”

Shape Dependent Electronic Properties of Aluminium Nitride Nanowires

“…Zhang et al 12 proposed synthesis of AlN nanowires by nitridation of Ti 3 Si 0 9 Al 0 1 C 2 solid solution. Wu et al 13 investigated the grown condition and structure of Wurtzite AlN nanowires grown on sapphire (0002) substrates by chemical vapor deposition and luminescence properties of AlN nanowire were studied by electron and photon excitation measurement. Yuan et al 14 fabricated density packed AlN nanowires by chemical conversion of Al 2 O 3 nanowires based on porous anodic alumina film.…”