2000
DOI: 10.1016/s0022-0248(00)00362-6
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Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications

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Cited by 35 publications
(27 citation statements)
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“…It is widely used for nonlinear optical devices due to its unique optical properties, including large nonlinear coefficient (d 36 =75 pm/V), wide transparency range (0.7-12 mm) and high thermal conductivity (0.35 W cm À1 K À1 ) combined with an extended phase matching range in the infrared [3][4][5]. However, wide application of ZGP crystals has been limited for years due to the lack of high-quality crack-free single crystals.…”
Section: Introductionmentioning
confidence: 99%
“…It is widely used for nonlinear optical devices due to its unique optical properties, including large nonlinear coefficient (d 36 =75 pm/V), wide transparency range (0.7-12 mm) and high thermal conductivity (0.35 W cm À1 K À1 ) combined with an extended phase matching range in the infrared [3][4][5]. However, wide application of ZGP crystals has been limited for years due to the lack of high-quality crack-free single crystals.…”
Section: Introductionmentioning
confidence: 99%
“…The heat of reaction of ZnP 2 formation can be easily removed in the temperature gradient region. It can be suggested that a synthesis furnace used in [12][13][14] had better thermal isolation in the temperature gradient region, what prevented a formation of ZnP 2 during synthesis. Since vapor Zn, transported into the temperature gradient region reacted with vapor P, forming ZnP 2 , there was no undesirable remaining phosphorus in the ampoule and no explosion occurred in the following steps of the synthesis process.…”
Section: Resultsmentioning
confidence: 99%
“…The solid ZnGeP 2 resulted in nonhomogeneous material in the hot zone and reduced the rate of chemical reactions. We can suggest that in papers [12][13][14] an additional mixing of the hot zone contents was applied to remove the solid reaction products, formed on the surface of the melt to increase the reaction rate, but such procedure was not used in our case. To solve this problem the temperature of the hot zone was adjusted to 1040 °C (the saturated vapor pressure above pure Zn is ~3 atm), which was higher than the melting point of ZnGeP 2 (1027 °C).…”
Section: Resultsmentioning
confidence: 99%
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