Intermediates and transport phenomena in two‐temperature synthesis of ZnGeP₂

Abstract

High quality semiconducting ternary compound ZnGeP 2 was synthesized by a modified two-temperature technique using high purity elemental zinc, germanium and phosphorus as the starting materials. Transport phenomena of zinc and phosphorus vapors and the major reaction intermediates, taking place in ZnGeP 2 formation, were studied by interrupting the synthesis process using quenching technique as well as by adjusting the temperatures of cold and hot zones. The powder X-ray diffraction analysis showed that the major reaction intermediates were ZnP 2 , Zn 3 P 2 , and GeP, which proportions were changed at the different temperature stages. ZnP 2 was formed in the temperature gradient region and ZnGeP 2 was formed in the hot zone when the temperature of the hot zone was higher than 900 °C. The 520-1040 °C temperature profile was chosen for the ZnGeP 2 synthesis and charge amount per run reached 200 g. The powder X-ray diffraction pattern of the synthesized ZnGeP 2 compound was in agreement with the standard pattern of ZnGeP 2 . These results demonstrated that the synthesized ZnGeP 2 compound was a single phase.

Noncentrosymmetric Ba6In2Q10 (Q = S, Se): Structural Chemistry and Nonlinear-Optical Activity

“…The available MFIR crystals are far from the market’s requirement, and there is an increasing demand for better ones. Nowadays, the most successful commercial MFIR crystals, AgGaQ 2 (Q = S, Se) , and ZnGeP 2 , encounter several intrinsic defects, restricting their applications; therefore, it is imminent to explore new ones. − …”

Vertical Bridgman growth and characterization of large ZnGeP2 single crystals

“…The original twotemperature synthesis technique was used as described previously [12], in which more than 300 g of ZGP material could be obtained in a synthesis process.…”

Research progress on mid-IR nonlinear optical crystals with high laser damage threshold in China

“…Due to the important applications of the mid-IR NLO crystals in optical communications, IR spectroscopy, and high-energy laser system, the research to find new NLO materials with high damage resistance to the incident laser beam together with relatively large NLO coefficient, wide transparent range in the mid-IR region, and good stability to the environment has become an urgent and challenging task in the field and thus has attracted great attention worldwide. Some good progress has been achieved in the last decade or so, for which the Chinese scientists have made a considerable contribution in both aspects: improving the crystal growth technique and exploring new strategy to search for new mid-IR NLO crystals [10][11][12][13][14][15][16][17][18][19]. This paper summarizes the recent research progress in China for mid-IR NLO crystals with high LDT.…”