Synthesis and Evaluation of Novel PAGs for ArF Lithography

Kodama, Kunihiko; Sato, Kenichiro; Tan, Shiro; Nishiyama, Fumiyuki; Yamanaka, Tsukasa; Kanna, Shinnichi; Takahashi, Hyou; Kawabe, Yasumasa; Momota, Makoto; Kokubo, Tadayoshi

doi:10.2494/photopolymer.17.501

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2007

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“…Since TPS has three benzene rings, it has strong absorption at 193 nm. Toshiba, 11) Hyundai, 12) and Fuji Photo Film 13) have all proposed sulfonium salts with a naphthalene ring or enone structure as a transparent PAG for ArF resists.…”

Section: Introductionmentioning

confidence: 99%

Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist

Maeda

Nakano

Iwasa

et al. 2007

jjap

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We evaluated dialkylsulfonium salts with an aromatic cyclic ketone structure (a 1-indanone, 1-tetralone, or 4-chromanone unit) as a photoacid generator for ArF chemically amplified resists. The thermal stability of the salts was affected by alkyl subsitituents. Sulfonium salts with two methyl groups or a pentamethylene group exhibited a decomposition temperature of more than 200 °C. The absorption coefficients at 193 nm for the new PAGs were 1/3 to 1/4 that of the conventional triphenylsulfonium salt. The photosensitivity of sulfonium salt with the 1-oxo-2-indanyl group with an ArF laser was two times that of a phenacyl sulfonium salt with an aromatic linear ketone structure. We also analyzed the photodecomposed compounds produced by irradiation with an ArF excimer laser. A positive resist using a dimethyl(1-oxo-2-indanyl)sulfonium salt achieved a 130 nm line-and space pattern.

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Section: Introductionmentioning

confidence: 99%