“…Up to now, various metal/nonmetal and semiconductor nanostructures have been successfully produced by different methods. [1][2][3] Also, metal/nonmetal (such as noble metal, metal oxide and carbon)-doped or decorated semiconductors have been demonstrated with improved optoelectronic, photoelectrochemical and optical properties. [4][5][6][7][8] Among various Group II-VI semiconductor materials, one dimensional nanostructures of ZnO possess advantages of large exciton binding energy of 60 meV and a wide direct band gap of 3.36 eV at room temperature; these properties make them promising for technological applications such as in light-emitting diodes, piezoelectric transducers, phosphors, sensors, UV lasers, solar cells, gas sensor optoelectronics, photovoltaics, photocatalysis, photonics, and UV photodetectors (PDs), [9][10][11][12] where photoexcited carrier dynamic processes in the femtosecond to nanosecond timescales play a critical role.…”