2018
DOI: 10.1016/j.mssp.2018.02.006
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Synthesis and characterizations of Ag-doped CdO nanoparticles for P-N junction diode application

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Cited by 51 publications
(17 citation statements)
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“…In comparison to the electroreduction peak at −1.12 V of Ag/ ZnO NPs, Ag/CdO NPs exhibited more positive reduction potentials due to the smaller energy gap of CdO NPs (2.26 eV) than ZnO NPs (3.24 eV). 36,37 Ag/CdO NPs also showed a higher electroreduction signal, which was 1.37 times that of Ag/ZnO NPs. The highest reduction currents and positive reduction potentials enabled Ag/CdO NPs to be an alternative electroactive nanobeacon for the sensitive detection of PSA.…”
Section: Resultsmentioning
confidence: 93%
“…In comparison to the electroreduction peak at −1.12 V of Ag/ ZnO NPs, Ag/CdO NPs exhibited more positive reduction potentials due to the smaller energy gap of CdO NPs (2.26 eV) than ZnO NPs (3.24 eV). 36,37 Ag/CdO NPs also showed a higher electroreduction signal, which was 1.37 times that of Ag/ZnO NPs. The highest reduction currents and positive reduction potentials enabled Ag/CdO NPs to be an alternative electroactive nanobeacon for the sensitive detection of PSA.…”
Section: Resultsmentioning
confidence: 93%
“…The graph shows a high dielectric constant value at the lower frequency region, and at a higher frequency range, the dielectric constant becomes a constant value. 42,43 The observed pattern clearly shows that the dielectric properties of the compound decreases with increase in the average particle size of the system. The values of the dielectric loss and dielectric constant of the samples are listed in Table 2.…”
Section: Resultsmentioning
confidence: 88%
“…Initially, the n-Si wafer was cleaned artificially to keep away from the nearness of polluting influences. The piranha arrangement (H2SO4:H2O2 =3:1) was set up for taking out the polluting influences out of the wafer and diluted HF (HF: H2O=1:10) was set up for expelling the native oxides on the Si surface, followed by rinsing in double-distilled water after each washing procedure before finally placing it on the substrate holder of JNSP arrangement [26,27]. The 0.1 M copper chloride solution was sprayed on the n-Si wafer at 600 ˚C.…”
Section: P-cuo/n-si Diode Fabricationmentioning
confidence: 99%