Impact of Substrate Temperature on Structural, Electric and Optical Characteristics of CuO Thin Films Grown by JNS Pyrolysis Technique

Jhansi, N.; Balasubramanian, D.; Chang, Jih-Hsing; Mohanraj, K.; Marnadu, R.; Manthrammel, M. Aslam; Shkir, Mohd.

doi:10.1007/s12633-021-01578-3

Cited by 8 publications

(3 citation statements)

References 39 publications

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“…For example, in a recent review on transparent conducting oxides, Spencer et al gathered some of the more recent measurements on CuO samples where the band gap energy ranges from 1.35 to 2.03 eV, depending on the synthesis method and substrate used. Jhansi et al created CuO thin films on a glass substrate and observed band gaps ranging from 1.8 to 2.9 eV, depending on the substrate temperature. Panda et al fabricated thin films containing copper oxide phases and measured gaps of 2.45 and 2.25 eV for Cu 2 O and CuO, respectively .…”

Section: Resultsmentioning

confidence: 99%

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu₂O

Živković

Mallia

et al. 2022

ACS Appl. Mater. Interfaces

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Well designed and optimized epitaxial heterostructures lie at the foundation of materials development for photovoltaic, photocatalytic, and photoelectrochemistry applications. Heterostructure materials offer tunable control over charge separation and transport at the same time preventing recombination of photogenerated excitations at the interface. Thus, it is of paramount importance that a detailed understanding is developed as the basis for further optimization strategies and design. Oxides of copper are nontoxic, low cost, abundant materials with a straightforward and stable manufacturing process. However, in individual applications, they suffer from inefficient charge transport of photogenerated carriers. Hence, in this work, we investigate the role of the interface between epitaxially aligned CuO and Cu 2 O to explore the potential benefits of such an architecture for more efficient electron and hole transfer. The CuO/Cu 2 O heterojunction nature, stability, bonding mechanism, interface dipole, electronic structure, and band bending were rationalized using hybrid density functional theory calculations. New electronic states are identified at the interface itself, which are originating neither from lattice mismatch nor strained Cu−O bonds. They form as a result of a change in coordination environment of CuO surface Cu 2+ cations and an electron transfer across the interface Cu 1+ −O bond. The first process creates occupied defect-like electronic states above the valence band, while the second leaves hole states below the conduction band. These are constitutional to the interface and are highly likely to contribute to recombination effects competing with the improved charged separation from the suitable band bending and alignment and thus would limit the expected output photocurrent and photovoltage. Finally, a favorable effect of interstitial oxygen defects has been shown to allow for band gap tunability at the interface but only to the point of the integral geometrical contact limit of the heterostructure itself.

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Section: Resultsmentioning

confidence: 99%

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu₂O

Živković

Mallia

et al. 2022

ACS Appl. Mater. Interfaces

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“…This tunable behavior of the band gap is very essential for many applications [46]. According to a very recent study reported by Jhansi et al [47], CuO thin films deposited by pyrolysis method at various substrate temperatures, ranging from 300 to 600 °C showed that the ST has strong influence on the crystallite sizes and optical transmission and band gaps clearly rely upon the growth temperatures.…”

Section: Introductionmentioning

confidence: 98%

Effects of substrate temperature on the growth of CuO nano/micro rods by ion beam sputter deposition

Ejigu

2022

Phys. Scr.

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CuO nano/micro rods were deposited on Si substrates by ion beam sputter deposition at substrate temperatures 300 C, 350 C, 400 C and 450 C. The effects of changing substrate temperature on the structural properties and surface morphology of the deposited CuO nano/micro roads were studied. Field Emission Scanning Electron Microscopy micrographs showed that at substrate temperature of 300 C and 350 C, tiny nanoparticles were observed on the surface of CuO thin films and at substrate temperature of 400 C and 450 C, CuO nano/micro rods of lengths (100 nm to 1 µm) observed in a periodic arrangement. X-Ray Diffraction (XRD) analysis showed that all the diffraction peaks of the samples were single-crystalline CuO corresponded to (1 ̅11) orientation. From the crystallographic analysis using XRD data, crystallite sizes of the samples increased (18 to 32 nm) with the increase of substrate temperature. The Micro-Raman spectroscopy investigation shows that all the Raman peaks observed were phonon modes of CuO and as the substrate temperature increased, the intensities of the Rama peaks increased. Hence, by changing substrate temperatures, it is possible to deposit high quality CuO nano/micro thin films with tunable structures, morphologies and sizes for different optoelectronic applications through ion beam sputter deposition.

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“…[2][3][4] However, TiO 2 has limitations in absorbing UV radiation from the Sun. 5,6 To overcome this, researchers have incorporated transition metals with TiO 2 to stabilize its activity and extend its absorption range to visible wavelengths. 7 One such metal oxide, copper oxide (CuO), has proven to be an ideal candidate due to its high absorption in the visible wavelength and easy accessibility of precursor materials.…”

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confidence: 99%

Breaking Boundaries in LED Technology: Exploring the Revolutionary Diode Characteristics of Screen Printed (TiO₂)_1−x (CuO)_x Thick Films

Zargar

Chackrabarti

Mearaj

et al. 2023

ECS J. Solid State Sci. Technol.

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A thick TiO2-CuO composite film is deposited on a Si substrate by a low-cost screen printing method. Both anatase and CuO-doped TiO2 are characterized for diode applications. X-ray dDiffraction confirms that the composite film exists as an anatase phase of TiO2 and a monoclinic phase of CuO with a maximum diffraction of (101) plane. Scanning electron microscopy images depict the less severe agglomeration of particles for the doped TiO2 as compared to the anatase TiO2. The UV-visible spectra reveal a direct band gap shift of 3.35 eV (pure TiO2) to 3.26 eV (doped TiO2). From the PL study, the blue shaded emission is perfectly derived for anatase TiO2 while the color is seen to change to the white zone supporting TiO2-CuO composite formation as depicted by the CIE diagram. The diode parameters such as ideality factor (n) and barrier height (Φb) are calculated with the help of I-V characteristics. This only reported novel effort on screen-printed TiO2-CuO thick film may help in manufacturing possible light-emitting diodes for optoelectronic applications.

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Impact of Substrate Temperature on Structural, Electric and Optical Characteristics of CuO Thin Films Grown by JNS Pyrolysis Technique

Cited by 8 publications

References 39 publications

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu₂O

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu₂O

Effects of substrate temperature on the growth of CuO nano/micro rods by ion beam sputter deposition

Breaking Boundaries in LED Technology: Exploring the Revolutionary Diode Characteristics of Screen Printed (TiO₂)_1−x (CuO)_x Thick Films

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Impact of Substrate Temperature on Structural, Electric and Optical Characteristics of CuO Thin Films Grown by JNS Pyrolysis Technique

Cited by 8 publications

References 39 publications

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu2O

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu2O

Effects of substrate temperature on the growth of CuO nano/micro rods by ion beam sputter deposition

Breaking Boundaries in LED Technology: Exploring the Revolutionary Diode Characteristics of Screen Printed (TiO2)1−x (CuO)x Thick Films

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Product

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Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu₂O

Mind the Interface Gap: Exposing Hidden Interface Defects at the Epitaxial Heterostructure between CuO and Cu₂O

Breaking Boundaries in LED Technology: Exploring the Revolutionary Diode Characteristics of Screen Printed (TiO₂)_1−x (CuO)_x Thick Films