Synthesis and Characterization of ZnO and Ni Doped ZnO

Abstract

ZnO and Zn 1−x Ni x O (x = 1, 2 and 3 mol %) were prepared by the sol gel via ultrasonication method with the Ni concentrations of 1, 2, and 3 mol %. The samples were characterized by high resolution scanning electron microscopy, X-ray diffraction, TEM, and UV-DRS spectroscopy. The XRD spectrum reveals that all the samples are of hexagonal wurtzite structures. The crystallite size decreases with increasing Ni concentration. The Ni concentration is determined by the energy dispersive X-ray technique. From the UV spectra, upon Ni doping the characteristic peak is red shifted which is the indication of decrease in the band gap. Magnetization measurements reveal that Ni doped ZnO shows paramagnetism with enhanced Ni concentration.

Role of Ni2+(d8) ions in electrical, optical and magnetic properties of CdS nanowires for optoelectronic and spintronic applications

“…Ni 2+ (3d 8 ) is an exceptional transition metal due to its chemical stability and ferromagnetic nature. Ni(II) ions have been doped into low dimensional nanostructures of ZnO, Zn and Cd based monochalcogenides in the form of quantum dots (QDs) [11,12], nanocrystals (NC) [13][14][15][16][17], composites [18,19], one-dimensional (1D) structures [7,20], and thin films [21][22][23]. It showed great success in improving the photo-catalytic, magnetic, optical and electrical properties of the host materials for various applications.…”

Theoretical Predictions of Electronic Structure and Half-Metallic Ferromagnetism in Al1−x Mn x P Diluted Magnetic Semiconductors

“…The half-metallic ferromagnetism behavior takes an important source for the newly developing field of spintronic because that is origin of spin-polarized carriers injected into the DMS materials. Especially, in the last 3 years, recent theoretical and experimental [32][33][34][35][36][37][38][39][40][41][42] studies focused on the analysis of existence of ferromagnetism in the DMS-based II-VI and III-V semiconductors doped with transition metal elements in order to investigate the possibility to use them in the spintronic devices. Generally, we realize the III-V DMS by substitution the III cation sites with transition metal atoms (TM) becomes as follows III 1−x TM x V DMS.…”

The size dependence and defect induced room temperature ferromagnetism of ZnO and Zn 1-x-y AlxZyO (Z=Mg/Ni) nanocomposites

“…The diffraction peaks can be indexed to a hexagonal wurtzite structured ZnO, which coincides with the standard JCPDS cards (No. 36-1451) [35][36][37][47][48][49][50][51][52][53][54]. The average size is calculated using Scherrer formula, which can be described as follows:…”