Synthesis and characterization of ZnGa2O4 particles prepared by solid state reaction

Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

“…Meanwhile, the Ga 2p XPS peaks of ZnGa 2 O 4 were approximately located at 1044.67 ± 0.5 eV (Ga 2p 1/2 ) and 1117.75 ± 0.5 eV (Ga 2p 3/2 ) on both substrates (Figure 6b) [25][26][27]. These results indicate that the Zn and Ga atoms are bonded with O atoms to form the ZnGa 2 O 4 spinel structure, rather than forming metallic clusters [28]. Figure 7 presents a compositional variation analysis of the stoichiometric Zn/Ga ratios in the ZnGa 2 O 4 films deposited on sapphire and Si(100) with various the substrates temperature, respectively.…”

Enhancement of photoluminescence, persistent luminescence and photocatalytic activity in ZnGa2O4 phosphors by lithium ion doping

“…2. Many studies assigned the spinel structure related phonon modes at C = A 1g + E g + T 1g + 3T 2g + 2A 2u + 2E u + 5T 1u + 2T 2u [14]. The Raman active modes (first order Raman modes) are A 1g + E g + 3T 2g and the infrared-active modes are 4T 1u .…”

Grain Size Dependent Comparison of ZnO and ZnGa2O4 Semiconductors by Impedance Spectrometry

“…The synthesis procedures were reported in previous publications [20,21]. Each sample in the powder form was first uniaxial pressed at 40 MPa, and then with isostatic compaction under 127 MPa to form a pellet with a diameter of 9 mm and a thickness of 1 mm (initial pellet size).…”