Synthesis and characterization of volatile liquid cobalt amidinates

Li, Zhengwen; Lee, Don Kuen; Coulter, Michael; Rodriguez, Leonard; Gordon, Roy G.

doi:10.1039/b800712h

Cited by 58 publications

(48 citation statements)

References 27 publications

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“…The elemental analysis result of compound 1 was well matched with the target structure, implying that the synthesized compound achieved the expected formation and purity. The 1 H‐NMR spectra (Figure ) of the compound exhibited a very large chemical shift and broad peaks, demonstrating that the synthesized compound was paramagnetic, and the numbers of peaks was consistent with the target structure shown in Scheme .…”

Section: Resultssupporting

confidence: 81%

An iron (II) guanidinate compound: Synthesis, characterization, thermal properties and its application as a CVD precursor for iron oxide film

Zhang

Liu

et al. 2019

Applied Organom Chemis

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An iron compound containing guanidinate ligand [Fe((SiMe 3 ) 2 NC( i PrN) 2 ) 2 ] was synthesized using a conventional lithium-salt-elimination reaction, and its chemical structure was characterized through elemental analysis, 1 H-NMR and single-crystal X-ray diffraction, respectively. The thermal properties of the compound were examined through thermogravimetric analysis (TGA), and the TGA results demonstrated that the compound possessed sufficient volatility and suitable thermal stability for the CVD process. Moreover, the deposition experiments were conducted using the synthesized compound as a precursor and O 2 as an oxygen source to confirm its applicability as a CVD precursor, and α-Fe 2 O 3 films were successfully deposited at a relatively low deposition temperature (300°C).

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Section: Resultssupporting

confidence: 81%

An iron (II) guanidinate compound: Synthesis, characterization, thermal properties and its application as a CVD precursor for iron oxide film

Zhang

Liu

et al. 2019

Applied Organom Chemis

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“…21 This result showed that no significant decomposition occurs within time periods of minutes even at temperatures as high as 200…”

Section: Methodsmentioning

confidence: 80%

“…The synthesis of Co[Bu t NC(Et)NEt] 2 has been described elsewhere. 21 This Co precursor is a dark green liquid at room temperature with melting point of −17…”

Section: Methodsmentioning

confidence: 99%

Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

Bhandari

Yang

Kim

et al. 2012

ECS J. Solid State Sci. Technol.

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An interlayer of face centered cubic (fcc) Co4N has demonstrated significant improvements in adhesion between copper and diffusion barrier layers. This fcc phase of Co4N was prepared by chemical vapor deposition (CVD) using bis(N-tert-butyl-N′-ethyl-propionamidinato)cobalt(II) and a reactant mixture of NH3 and H2 at substrate temperatures from 100 to 180°C. The Co/N atomic ratio and the phase of cobalt nitride film can be modified by adjusting the ratio of NH3 and H2 in the gas feedstock. The cobalt nitride films prepared by CVD are smooth, highly conformal, and stable against intermixing with copper up to at least 400°C. This fcc cobalt nitride material has very strong adhesion to copper due to the small lattice mismatch (−1 to 2%) between fcc-Co4N and fcc Cu. Copper wires should be stabilized against failure by electromigration when fcc cobalt nitride interlayers are placed between the copper and surrounding diffusion barriers.

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“…An example is tetrakis(N,N 0 -dimethylformamidinato)zirconium, an extremely stable ALD precursor for zirconium oxide [59,60] Ligand sizes on metal amidinates can generally be chosen so that they have high reactivity to many non-metal precursors, such as water vapor, ammonia, hydrogen sulfide, and even molecular hydrogen. Direct liquid injection can be used to vaporize liquid amidinates [61], as well as solid ones dissolved in inert hydrocarbon solvents.…”

Section: Types Of Ald Precursors For Metalsmentioning

confidence: 99%

ALD Precursors and Reaction Mechanisms

Gordon

2013

Atomic Layer Deposition for Semiconductors

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ALD has become accepted as a reliable tool for production of thin films in the microelectronics industry. Dielectrics and metal electrodes for DRAM capacitors are now routinely produced by ALD, which is the only technique capable of uniformly coating inside the narrow structures required by current technology. Transistors will soon be produced as 3D structures, with requirements for conformal coatings over their increasingly complex surfaces. Metal circuits between transistors are also pushing toward narrower and deeper structures, such as through-silicon vias. In order to extend the use of ALD into these new areas, a greater variety of materials will need to be deposited.Successful use of ALD requires suitable chemical precursors used under reaction conditions that are appropriate for them. There are many requirements for ALD precursors: sufficient volatility, thermal stability, and self-limited reactivity with substrates and with the films being deposited. The precursor vapor should not etch or corrode the substrate or deposited film. In addition, it is easier to produce the required vapors if the precursor is liquid at room temperature, or if it is a solid with a melting point below its vaporization temperature, or if it is soluble in an inert solvent with vapor pressure similar to that of the precursor. Ideally, the precursors should be non-flammable, non-corrosive, non-toxic, non-hazardous, and simple and inexpensive to make. In applications of ALD to microelectronics, precursors with high purity may be required.It is not easy to find ideal precursors that satisfy all of these requirements. When the properties of precursors are inadequate, satisfactory ALD results cannot be achieved.

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Synthesis and characterization of volatile liquid cobalt amidinates

Cited by 58 publications

References 27 publications

An iron (II) guanidinate compound: Synthesis, characterization, thermal properties and its application as a CVD precursor for iron oxide film

An iron (II) guanidinate compound: Synthesis, characterization, thermal properties and its application as a CVD precursor for iron oxide film

Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

ALD Precursors and Reaction Mechanisms

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