Synthesis and Characterization of Vacancy-Doped Neodymium Telluride for Thermoelectric Applications

Gomez, Steven J.; Cheikh, Dean; Vo, Trinh; Allmen, Paul von; Lee, Kathleen; Wood, Max; Snyder, G. Jeffery; Dunn, Bruce; Fleurial, Jean‐Pierre; Bux, Sabah K.

doi:10.1021/acs.chemmater.9b00964

Cited by 26 publications

(33 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The κ values for both specimens (Figure ) are relatively low and comparable to Bi 2 Te 3 alloys and other chalcogenides, e.g. Nd 3– x Te 4 , that have been investigated for potential thermoelectric applications , . However, they indicate different temperature dependencies.…”

Section: Resultssupporting

confidence: 50%

“…The physical properties of the RE Te 2–δ compounds have been primarily investigated for LaTe 2 and CeTe 2 , including magnetization,, , electronic structure,, optical and transport properties , . The cubic Th 3 P 4 ‐phases La 3– x Te 4 , Ce 3 Te 4 , Pr 3– x Te 4 and Nd 3– x Te 4 have also been investigate for potential thermoelectric applications, particularly at high temperatures . Due to the complex structural chemistry of RE Te 2–δ and the oxophilic behavior of the rare earth metals, the number of reports on the physical properties and applications of these materials are limited.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Transport Properties of GdTe_1.8–_xAs_x (x = 0, 0.04)

et al. 2020

View full text Add to dashboard Cite

Phase-pure polycrystalline samples of GdTe 1.8 and GdTe 1.76 As 0.04 were synthesized by reacting Gd 2 Te 3 with elemental Te and As, employing a small amount of I 2 as mineralizer. Polycrystalline specimens were densified by SPS for temperature dependent electrical and thermal properties investigations. The electrical properties indicate that arsenic doping leads to a change from n-to p-type conduction, with an orderof-magnitude reduction in resistivity with As doping at room-[a

show abstract

Section: Resultssupporting

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Transport Properties of GdTe_1.8–_xAs_x (x = 0, 0.04)

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Therefore, while an accurate lattice thermal conductivity of this material cannot be calculated, we can qualitatively explain the temperature dependence of the thermal conductivity. This multiband model could also be used to explain the unexplained increase in thermal conductivity at low temperatures seen in RE 3− x Te 4 ( RE = Nd, La) ( 31 ), SnTe ( 32 ), Ag 9 AlSe 6 ( 33 ), and Eu 9 CdSb 9 ( 34 ). These phases have reported electronic structures, and while the effect the multiband nature of the electronic structures has on transport properties is acknowledged, an explanation for their low-temperature thermal conductivity is not discussed and is most likely also affected by multiple bands.…”

Section: Resultsmentioning

confidence: 99%

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb ₁₄ MnSb ₁₁ and Yb ₁₄ MgSb ₁₁

et al. 2021

Self Cite

View full text Add to dashboard Cite

The Zintl phases, Yb14MSb11 (M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb14MnSb11 gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA’s deep space exploration. This study investigates the solid solution of Yb14Mg1−xAlxSb11 (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy (Nv = 8) band is responsible for the groundbreaking performance of Yb14MSb11. This multiband understanding of the properties provides insight into other thermoelectric systems (La3−xTe4, SnTe, Ag9AlSe6, and Eu9CdSb9), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb14MSb11 systems.

show abstract

“…It is apparent that the Fermi level (dot line) cuts deeply into the conduction band, in accordance with the electronic band structures reported in R 3 Te 4 (R = La, Pr and Nd). 35,37,38 Since the Gd 3+ donates 3 electrons and the Se 2only accepts 2 electrons to form Gd-Se chemical bonds, this leads to one free electron per unit formula and accounts for its intrinsically metallic characteristic. With increasing the content of Gd vacancy, x from 0.16 to 0.25 for Gd 3-…”

Section: Crystal Structuresmentioning

confidence: 99%

Crystal Structure and Atomic Vacancy Optimized Thermoelectric Properties in Gadolinium Selenides

et al. 2020

View full text Add to dashboard Cite

Thermoelectric materials enable the mutual energy conversion of waste heat and electricity, critical to relieve global energy crisis. Hightemperature thermoelectric materials are special species due to their high-temperature stability and noticeable energy conversion efficiency.Here, we report a systematic investigation on high-temperature thermoelectric gadolinium selenides, cubic Gd 3-x Se 4 (x = 0.16, 0.21 and 0.25) and orthorhombic Gd 2 Se 3-y (y = 0.02, 0.06 and 0.08). High energy synchrotron x-ray diffraction and total scattering are used to investigate the crystallographic and local structures. The atomic-scale cluster of Gd vacancy in cubic Gd 2.84 Se 4 is observed by employing the reverse Monte Carlo simulation. For cubic Gd 3-x Se 4 , its carrier concentration is tuned and multiple conduction bands are incorporated by adjusting Gd vacancy. Experimentally, the gradual increase in effective masses is evidently observed in cubic Gd 3-x Se 4 , which is consistent with the density functional theory (DFT) calculation. A reasonable peak zT value of 0.27 is achieved at 850 K for Gd 2.84 Se 4 . On the other hand, adjusting Se vacancy enables the optimization of electron concentration for orthorhombic Gd 2 Se 3-y phase. Its low deformation potential (Ξ = 12eV) with single conduction band gives rise to enhanced electron mobility and higher peak zT value of 0.54 at 850 K for Gd 2 Se 2.98 . In addition, a higher zT of 1.2 at1200 K is reasonably predicted for Gd 2 Se 2.98 by using quality factor analysis. This work not just presents a systematic crystallographic investigation of gadolinium selenides, but also provides a deep insight into the charge transport and phonon scattering mechanisms. This study facilitates the exploration of more hightemperature thermoelectric materials.

show abstract

Synthesis and Characterization of Vacancy-Doped Neodymium Telluride for Thermoelectric Applications

Cited by 26 publications

References 33 publications

Transport Properties of GdTe_1.8–_xAs_x (x = 0, 0.04)

Transport Properties of GdTe_1.8–_xAs_x (x = 0, 0.04)

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb ₁₄ MnSb ₁₁ and Yb ₁₄ MgSb ₁₁

Crystal Structure and Atomic Vacancy Optimized Thermoelectric Properties in Gadolinium Selenides

Contact Info

Product

Resources

About

Synthesis and Characterization of Vacancy-Doped Neodymium Telluride for Thermoelectric Applications

Cited by 26 publications

References 33 publications

Transport Properties of GdTe1.8–xAsx (x = 0, 0.04)

Transport Properties of GdTe1.8–xAsx (x = 0, 0.04)

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb 14 MnSb 11 and Yb 14 MgSb 11

Crystal Structure and Atomic Vacancy Optimized Thermoelectric Properties in Gadolinium Selenides

Contact Info

Product

Resources

About

Transport Properties of GdTe_1.8–_xAs_x (x = 0, 0.04)

Transport Properties of GdTe_1.8–_xAs_x (x = 0, 0.04)

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb ₁₄ MnSb ₁₁ and Yb ₁₄ MgSb ₁₁