Transport Properties of GdTe_1.8–xAs_x (x = 0, 0.04)

Abstract

Phase-pure polycrystalline samples of GdTe 1.8 and GdTe 1.76 As 0.04 were synthesized by reacting Gd 2 Te 3 with elemental Te and As, employing a small amount of I 2 as mineralizer. Polycrystalline specimens were densified by SPS for temperature dependent electrical and thermal properties investigations. The electrical properties indicate that arsenic doping leads to a change from n-to p-type conduction, with an orderof-magnitude reduction in resistivity with As doping at room-[a