Synthesis and characterization of tetragonal and orthorhombic Sn_1-xBa_xO₂ nanostructures via the spray pyrolysis method

Abstract

A single and mixed-phases SnO2 (M-SnO2) nanostructures were synthesized by a simple spray pyrolysis method. The nanostructural crystallinity, surface morphology and optical evolution of Ba-doped tetragonal phase SnO2 with different Ba contents were studied by x-ray diffraction, atomic force microscopy, ultraviolet-visible spectroscopy and photoluminescence spectral measurements. The M-SnO2 with orthorhombic as well as tetragonal phases are formed in 6% Ba-doped SnO2 sample and it exhibits the highest average transmittance 86% with blue-shift of the optical band gap. The observed strong red emission at ∼ 615 nm might be encouraging for the implementation of red emission based on Ba-doped transparent conducting electrodes.

Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)

“…01-079-0613) in the first configuration, due to the occurrence of MIC forming poly:Si) . There is other three peaks at 2θ = 34°, 38°, and 44°, corresponding to tetragonal SnO 2 (101), SnO 2 (111) (JCPDS File Card No 41-1445) and GeO 2 (201) (JCPDS File Card No. 43-1016), respectively, due to the annealing at slightly low levels of vacuum that cause partial oxidation of Ge and Sn .…”

Towards white light laser emission based on strained Poly:(Si/Ge)

“…There are other three peaks at 2θ = 34°, 38° and 44° corresponding to SnO 2 (101), SnO 2 (200) (JCPDS Card No 41-1445) and GeO 2 (201) JCPDS (card no. , respectively due to the annealing at slightly low level of vacuum that causes partially oxidation of Ge and Sn [19,20]. On the other hand, the con gurations deposited on n-Si and p-Si show highly oriented poly-GeSn crystallites at (400) direction of 2θ = 62°.…”

Control of Optical and Electrical Characteristics of BaxSn1–xO2–x Films with Bandgap Engineering as a Function of Ba:Sn Ratio

“…Recently, it has been reported that magnesium (Mg) doping can effectively reduce the quenching sites on ZnO surface. , Tin oxide (SnO 2 ) is also an important semiconductor having wide bandgap ( E g ) between 3.5 and 3.8 eV depending on experimental results and theoretical estimations . To make SnO 2 suitable for ETLs and modulate the physical properties, several groups have explored dopants such as europium (Eu), indium (In), antimony (Sb), strontium (Sr), cobalt (Co), barium (Ba), neodymium (Nd), etc. Recently, barium stannate (BaSnO 3 ) has been explored as an ETL material for optoelectronic devices due to its excellent properties such as large bandgap, relatively high electron mobility, and suitable energy level. − It was reported that the optical and electrical properties of BaSnO 3 can be modulated by doping with Zn, La, Sb, or F .…”

“…It is observed that the BSO films show broader absorption in the wavelength region between 300 and 800 nm with increasing the Ba:Sn ratio. The optical bandgap of the BSO films was estimated from Tauc plots drawn from UV–vis absorption spectra, using (α h ν) = hν – E g , where α is the absorption coefficient, h Planck’s constant, ν the frequency, and E g the bandgap energy . The estimated bandgap values of BSO were 3.02, 3.08, 3.14, 3.37, 3.44, and 3.71 eV for the BSO films with Ba:Sn ratios of 0.50:0.50 (i.e., BaSnO 3 ), 0.42:0.58, 0.31:0.69, 0.21:0.79, 0.10:0.90, and 0.00:1.00 (i.e., SnO 2 ), respectively.…”

“…The optical bandgap of the BSO films was estimated from Tauc plots drawn from UV−vis absorption spectra, using (αhν) 2 = hν − E g , where α is the absorption coefficient, h Planck's constant, ν the frequency, and E g the bandgap energy. 17 The estimated bandgap values of BSO were 3.02, 3.08, 3.14, 3.37, 3.44, and 3.71 eV for the BSO films with Ba:Sn ratios of 0.50:0.50 (i.e., BaSnO 3 ), 0.42:0.58, 0.31:0.69, 0.21:0.79, 0.10:0.90, and 0.00:1.00 (i.e., SnO 2 ), respectively. All the estimated bandgaps of the BSO films are in the range of 3.0−3.7 eV, which are well matched with the reported values.…”