Synthesis and characterization of nanosized titanium oxide films on the (0001) α-Al2O3 surface

Dolgushev, N. V.; Малков, А. А.; Малыгин, А. А.; Суворов, С. А.; Shchukarev, Andrey; Beljaev, A.V.; Быков, В. А.

doi:10.1016/s0040-6090(96)08985-7

Cited by 10 publications

(6 citation statements)

References 4 publications

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“…We quantified surface area changes of ZnO films and NRAs, which cannot be accurately probed by bulk techniques, such as N 2 adsorption, by measuring the UV−visible absorbance of an ∼8 Å conformal coating of TiO 2 deposited on ZnO using atomic layer deposition (ALD) . ALD produces a conformal coating of TiO 2 on the ZnO nanorods, as shown by the TEM image (Figure a).…”

Section: Resultsmentioning

confidence: 99%

“…By varying seeding and growth parameters, we fabricated ZnO NRAs of different lengths on glass substrates. We deposited a conformal coating of TiO 2 on the ZnO NRAs using atomic layer deposition (ALD) 19 and measured the TiO 2 absorbance in the UV-visible spectra to determine the surface area enhancement of ZnO NRAs. We then examined the J-V response of corresponding ZnO NRA/P3HT PV devices and found a correlation between NRA surface area and J sc , suggesting that increased interfacial area in NRAs generally improves performance.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of ZnO Nanorod Array Morphology for Hybrid Photovoltaic Devices

et al. 2009

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Hybrid inorganic oxide/conjugated polymer photovoltaic devices using ZnO nanorod arrays (NRAs) instead of planar films as the electron-transport layer exhibit significant improvements in performance that have been attributed to increased heterojunction surface area, although the relationship has not been quantitatively established. Here, we independently measure the surface area of ZnO NRAs and quantify its effect on the performance of ZnO NRA/poly(3-hexylthiophene) (P3HT) photovoltaic devices. We find that a device utilizing a vertically aligned 180 nm ZnO NRA exhibits an ∼2.7× enhancement in the short-circuit current compared with that of a bilayer device, in excellent agreement with the increase in surface area. In addition, we show that a subtle difference in the NRA morphology can impact P3HT crystallinity in the photoactive region. Improved P3HT crystallinity leads to an ∼25% enhancement in the short-circuit current for devices with the same surface area. On the basis of these findings, we modify the NRA growth to introduce more spacing between nanorods and create a ZnO NRA/P3HT device with a high short-circuit current density of 2.91 mA/cm2. These results indicate that, although increased surface area is the most important factor to improving photocurrent and efficiency, other factors, such as ZnO NRA morphology and P3HT crystallinity, also impact the performance of ZnO/P3HT photovoltaic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimization of ZnO Nanorod Array Morphology for Hybrid Photovoltaic Devices

et al. 2009

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“…There exists one earlier report of ALCVD growth of titanium oxide films on ␣-Al 2 O 3 (0 0 1) substrates 27 but no phase identification or epitaxial relationships were reported. However, epitaxial rutile films have earlier been grown both by MOCVD 18 but the deposition temperatures needed for epitaxial growth were much higher, 800 and 725ЊC, respectively.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Chemical Vapor Deposition of TiO[sub 2] Low Temperature Epitaxy of Rutile and Anatase

Schuisky

Hårsta

Aidla

et al. 2000

J. Electrochem. Soc.

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This study demonstrates that atomic layer chemical vapor deposition is an excellent technique for growing epitaxial TiO 2 thin films at low temperatures. Using TiI 4 and H 2 O 2 as precursors, both the rutile and anatase phases could be deposited. Anatase is invariably obtained at lower deposition temperatures, but the temperature of the anatase/rutile phase boundary is affected by the substrate material chosen. Phase-pure rutile was obtained down to 275ЊC on a-Al 2 O 3 (0 1 2), while phase-pure anatase was obtained up to 375ЊC on MgO (0 0 1). The rutile phase was found to grow epitaxially on both ␣-Al 2 O 3 (0 1 2) and ␣-Al 2 O 3 (0 0 1) substrates with the in-plane orientational relationships, and [0 1 0] rutile //[1 0 0] ␣-Al 2 O3 , respectively. The anatase phase was found to grow epitaxially on MgO (0 0 1) with the in-plane orientational relationships [0 1 0] anatase //[0 1 0] MgO and [0 0 1] anatase //[1 0 0] MgO . The scan X-ray diffraction measurements verified that epitaxy was still obtained at a deposition temperature of 375ЊC. This deposition temperature is considerable lower than those commonly applied to realize heteroepitaxy of titanium oxide films.

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“…The data illustrated in color in one of the figures, is shown in black in all the other figures. The data is retrieved from the following references: TiCl4/H2O [13,17,19,22,23,28,30,37,38,42,44,45,56,58,83,88,94,123,124], TiCl4/H2O2 [334][335][336], TiCl4/O3 [271],TiCl4/O2 plasma [344,345], TiCl4/MeOH [347],TiI4/H2O [348], TiI4/H2O2 [352,354], TiI4/O2 [356], TiF4/H2O [357].…”

Section: Halidesmentioning

confidence: 99%

Titanium dioxide thin films by atomic layer deposition: a review

Niemelä

Marín

Karppinen

2017

Semicond. Sci. Technol.

137

116

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Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cov er the lat est tr ends in t he research f ield, both the var iously constr ucted TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

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Synthesis and characterization of nanosized titanium oxide films on the (0001) α-Al2O3 surface

Cited by 10 publications

References 4 publications

Optimization of ZnO Nanorod Array Morphology for Hybrid Photovoltaic Devices

Optimization of ZnO Nanorod Array Morphology for Hybrid Photovoltaic Devices

Atomic Layer Chemical Vapor Deposition of TiO[sub 2] Low Temperature Epitaxy of Rutile and Anatase

Titanium dioxide thin films by atomic layer deposition: a review

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