Synthesis and characterization of nanocrystallized In2S3 thin films via CBD technique

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

“…This behavior can be explained by the change of the particles' size (D) with t. Indeed, the smaller crystallites allow the deposition in relatively large numbers and possibly the appearance of some linear defects (dislocation) and their development throughout the growing structure. Yahmadi et al [1] also reported similar results for b-In 2 S 3 thin films deposited on glass by Chemical Bath Deposition technique. In addition, the microstrain (e) in the all samples is compressive (e & -17 %).…”

“…It appears to be one of the most promising candidates for photovoltaics owing to its stability, interesting structural characteristics [1,2], electronical [3], optical, photoelectrical [4,5] and acoustical properties [6] as well as its photocatalytic [7] and environmental interest [8]. In 2 S 3 is an n type semiconductor and it exists in three crystallographic phases a, b and c. Among these structures, b-In 2 S 3 is the most stable phase at room temperature.…”

“…Using grain size values, the dislocation density (d), defined as the length of dislocation lines per unit volume of the crystal has been calculated by using the Williamson and Smallman's formula [1,14]:…”

“…The strain (e) in thin films affects the opto-electronic properties of the layers due to the distorted lattice and it was assessed using the relation [1,14]:…”

Novel reduced toxic route synthesis and characterization of chemical bath deposited ZnSe thin films

“…Therefore, the Cd based buffer layer should be replaced for two reasons; (i) further improvement in the short circuit current (I sc ), which can be achieved using a wide band gap material and (ii) environmentally friendly synthesis process. Among the various alternatives such as ZnO, ZnS, ZnSe, In 2 S 3 and InSe [9][10][11][12][13], the wide band gap materials like zinc sulphide (ZnS) with a band gap energy of 3.7 eV and zinc selenide (ZnSe) with band gap energy of 2.7 eV are the best candidates since they are economically priced and create low conduction band offsets [3,6,14]. Additionally these materials are most appropriate for their use in photoluminescent, electroluminescent devices and in short wavelength emitting diodes due to their wide band gap energy [15][16][17].…”