Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

Abdel-Galil, A.; Balboul, M.R.; Sharaf, Abdelhameed

doi:10.1016/j.physb.2015.08.001

Cited by 19 publications

(4 citation statements)

References 31 publications

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“…This return to the concentration of pure ZnO thin films which is about 50 % as shown in Fig. 1-a, [15] for each components. It is not seen in Table 1 and Fig.…”

Section: Energy Dispersive X-ray Spectroscopy (Edx)mentioning

confidence: 68%

Synthesis Characterization and Gamma Irradiation Effect on Cobalt Doped ZnO Diluted Magnetic Semiconductor

Sharaf¹

2022

Arab Journal of Nuclear Sciences and Applications

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In this manuscript, Cobalt (Co)-doped to Zinc Oxide (ZnO) samples prepared as thin films. These samples were obtained by utilizing spray pyrolysis have different concentrations of Cobalt. For investigating the effect of Co concentration on the thin films samples' physical properties, Different experimental techniques are employed. Such as Scanning Electron Microscope (SEM), X-ray diffraction, and optical spectroscopy. The grain size has been obtained using Scherrer's equation. From the obtained results, one can notice that the grain size behavior is non-linearly with the Co-concentration level. Electron Spin Resonance (ESR) is involved to observe the resonance absorption of microwave radiation of these thin films. It measures the spins of an electron of a molecule or an atom in a magnetic field. The study is performed before and after irradiation doses of 1 KGy and 3 KGy.The ESR signal shows the ferromagnetic response at room temperature which is improved after irradiation with Gamma-ray. The optical band gap of pure ZnO film was found to be 3.25 eV and the minimum bandgap is 3.11 for 1wt%. The existence of Co in the obtained film was confirmed by Energy Dispersive X-Ray (EDX) data. From the obtained results, the percentage of Co is increasing from 1.9% to 5.4% when the wt% is raising. In addition, the effect of the ionizing radiation doses; 1KGy and 3 KGy, on the magnetic and structural properties are investigated. As a result, Magnetic measurements for all prepared samples show a Room Temperature Ferromagnetic (RTFM) behaviour. Finally, increasing Co concentration and Gammaray irradiation dose will have a notified change on the ESR signal.

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“…This return to the concentration of pure ZnO thin films which is about 50 % as shown in Fig. 1-a, [15] for each components. It is not seen in Table 1 and Fig.…”

Section: Energy Dispersive X-ray Spectroscopy (Edx)mentioning

confidence: 68%

Synthesis Characterization and Gamma Irradiation Effect on Cobalt Doped ZnO Diluted Magnetic Semiconductor

Sharaf¹

2022

Arab Journal of Nuclear Sciences and Applications

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“…From Table 3, it can be observed that the there is a general decrease in the band gap of the nanoparticles with increasing Mn percentage doping. Abdel-Galil et al [30] have given reasons for the observed decrease in band gap. A plot of the variation in estimated band gaps with Mn percentage doping is shown in Figure 12.…”

Section: 𝐴ℎ𝜈mentioning

confidence: 99%

“…𝐾 ℎ𝜈 𝐸 where A is the absorbance, hv is the photon energy, n takes on the value of 1/2 or 2 depending on whether the optical transitions are indirect or indirect [30], and K is a constant. The band gap E g is determined by first plotting a graph of (Ahν) 1/n vrs hν.…”

Section: 𝐴ℎ𝜈mentioning

confidence: 99%

Synthesis of Pure and Manganese Doped Zinc Oxide Nanoparticles by a Solution Growth Technique: Structural and Optical Investigation

Antwi,

Nkrumah,

Ampong

et al. 2023

East Eur. J. Phys.

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Pure and manganese doped zinc oxide nanoparticles have been successfully synthesized over the composition range, Zn1-xMnxO (0<x<0.5), by a solution growth process. The effect of Mn doping on the structure, morphology and optical properties were investigated by several techniques. X-Ray diffraction studies confirmed the formation of a single-phase polycrystalline hexagonal wurtzite structure of ZnO within the range, 0 < x < 0.3. No Mn related secondary phases were detected, within this range, which could be attributed to the fact that the dopant atoms had been well incorporated into the ZnO crystal lattice. For Zn1-xMnxO (x = 0.5), several low intensity peaks belonging to remnants of Manganese acetate were observed in the diffractogram, establishing a solubility limit for the synthesis technique used. The variation of d-spacing with Mn percent doping showed a very good agreement with Vergard’s law within the range (0<x<0.25). EDAX analysis of the nanoparticles was consistent with the formation of Mn doped ZnO. The optical band gap of the ZnO nanoparticles decreased linearly with increasing Mn percent doping, suggesting the possibility of tuning the band gap of ZnO by doping with Mn.

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“…The research going on ZnO semiconductor because outstanding physico-chemical properties and have the three forms such as zinc blende, rock salt and wurtzite. Because of hexagonal wurtzite phase of ZnO is more stable at room temperature [1][2][3][4]. Zinc oxide, a large excition binding energy of 60 meV, a wide band gap (3.37 eV) has been extensively studied due to its intrinsic properties and has attracted much attention for possible applications in optoelectronic devices such as field-effect transistors, resonators, gas sensors and solar cells, and as a catalyst [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Micro-structural, Morphological and Optical Properties of Pure and Metal (Mn & Mg) Doped ZnO Thin Films by Low Cost SILAR Method

Devi¹,

Selvan²,

Karunakaran

et al. 2019

Asian J. Chem.

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Pure and metals (Mn & Mg) doped zinc oxide (ZnO, ZnO/Mn and ZnO/Mg) thin films have been successfully grown onto a glass substrates by low cost SILAR method. The structural, morphological, compositional, functional group and optical properties of the prepared films were studied using X-ray diffraction, scanning electron microscope and EDAX, FTIR and UV-visible spectrophotometer, respectively. The structure of the films were found to be hexagonal with polycrystalline in nature with preferential orientation along (002) plane. From Fourier Transform Infrared spectroscopy, the presence of functional groups and its corresponding molecular vibrations were assessed. In UV-visible spectroscopy, the obtained direct optical band gap values 3.46, 3.56 and 3.7 eV for pure, Mn and Mg doped ZnO thin films, respectively. Morphological results showed that the remarkable changes in morphology due to the effect of metal doping. EDAX studies showed that the presence of zinc and oxygen content and also a doping metal ions.

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Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

Cited by 19 publications

References 31 publications

Synthesis Characterization and Gamma Irradiation Effect on Cobalt Doped ZnO Diluted Magnetic Semiconductor

Synthesis Characterization and Gamma Irradiation Effect on Cobalt Doped ZnO Diluted Magnetic Semiconductor

Synthesis of Pure and Manganese Doped Zinc Oxide Nanoparticles by a Solution Growth Technique: Structural and Optical Investigation

Micro-structural, Morphological and Optical Properties of Pure and Metal (Mn & Mg) Doped ZnO Thin Films by Low Cost SILAR Method

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