Synthesis and characterization of low pressure chemically vapor deposited titanium nitride films using TiCl4 and NH3

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

“…The minimum TiN resistivity of 220 mV Á cm with pure Ti[N(Et) 2 ] 4 precursor was achieved at 500 8C. The lowest observed CVD-produced TiN resistivity value is around 85 mV Á cm, as found by Ramanuja et al [8] and by Yokoyama et al [9] using TiCl 4 precursors at 700 8C, but it is still approximately a factor of 2 higher than the value of 39 mV Á cm reported for the physical vapor deposition (PVD) of TiN films. [10] In order to understand the difference between the minimum resistance values at various temperatures of our TiN layers, obtained from various precursor concentrations, X-ray diffraction (XRD), X-ray reflectivity (XRR), and X-ray photoelectron spectroscopy (XPS) measurements were performed.…”

Novel aluminum-rich Ti1−xAlxN coatings by LPCVD

“…The coatings have a very low chlorine content below 1 at.% which slightly increases with the titanium content. TiN films prepared with ammonia show similar Cl concentrations [9]. The oxygen concentration is also low with values not exceeding 2.5 at.%.…”

Vibrational spectra of CaGa2O4, Ca2GeO4, CaIn2O4 and CaSnO3 prepared by electrospinning

“…Up to now, different methods have been employed to prepare various nanostructural materials, such as chemical vapor deposition [6], solid-state reaction method [7], solgel [8], and other methods [9,10]. As we know, CaGa 2 O 4 , Ca 2 GeO 4 , CaIn 2 O 4 , and CaSnO 3 were generally synthesized by the solid-state reactions, which needed high temperature, long reaction time due to the high demand of activation energy, and the difficulty in migration of the reactants.…”