Synthesis and characterization of inorganic fullerene-like WSe<sub>2</sub>material

Tsirlina, T.; Feldman, Yishai; Homyonfer, M.; Sloan, Jeremy; Hutchison, J. L.; Tenne, R.

doi:10.1080/10641229809350191

Cited by 51 publications

(42 citation statements)

References 7 publications

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“…MoSe 2 has a bandgap of 15 eV, which is slightly lower than that of MoS 2 (1.9 eV), and so it is of interest as a material for devices . However, the CVD synthesis of MoSe 2 is not as easy as that of MoS 2 because of the lower chemical reactivity of Se as compared to S . None‐the‐less, a few reports are emerging .…”

Section: Other 2d Materialsmentioning

confidence: 99%

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Low Voltage Transmission Electron Microscopy of Graphene

Bachmatiuk

Zhao

Gorantla

et al. 2014

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The initial isolation of graphene in 2004 spawned massive interest in this two-dimensional pure sp(2) carbon structure due to its incredible electrical, optical, mechanical, and thermal effects. This in turn led to the rapid development of various characterization tools for graphene. Examples include Raman spectroscopy and scanning tunneling microscopy. However, the one tool with the greatest prowess for characterizing and studying graphene is the transmission electron microscope. State-of-the-art (scanning) transmission electron microscopes enable one to image graphene with atomic resolution, and also to conduct various other characterizations simultaneously. The advent of aberration correctors was timely in that it allowed transmission electron microscopes to operate with reduced acceleration voltages, so that damage to graphene is avoided while still providing atomic resolution. In this comprehensive review, a brief introduction is provided to the technical aspects of transmission electron microscopes relevant to graphene. The reader is then introduced to different specimen preparation techniques for graphene. The different characterization approaches in both transmission electron microscopy and scanning transmission electron microscopy are then discussed, along with the different aspects of electron diffraction and electron energy loss spectroscopy. The use of graphene for other electron microscopy approaches such as in-situ investigations is also presented.

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Section: Other 2d Materialsmentioning

confidence: 99%

“…However, the CVD synthesis of MoSe 2 is not as easy as that of MoS 2 because of the lower chemical reactivity of Se as compared to S . None‐the‐less, a few reports are emerging . In addition to the fabrication of monolayer MoSe 2 , few‐layer samples are also possible.…”

Section: Other 2d Materialsmentioning

confidence: 99%

Low Voltage Transmission Electron Microscopy of Graphene

Bachmatiuk

Zhao

Gorantla

et al. 2014

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“…For the 2H-WSe encapsulated oxides, a reduced commercially available WO powder (BDH) was used as a precursor material instead. The material had particle sizes in the range 100-150 nm and was reduced and then encapsulated by 2H-WSe using a similar procedure to that used for the preparation of the 2H-WS encapsulates but substituting H Se gas for H S. This encapsulation was performed at the lower temperature of 760°C for 90 min with a flow rate of 120 ml/min for the forming gas and 2-4 ml/min for H Se, respectively (3,22). Note that in this case, the reduction and selenization occur simultaneously.…”

Section: Methodsmentioning

confidence: 99%

Defect and Ordered Tungsten Oxides Encapsulated Inside 2H–WX2(X=S and Se) Fullerene-Related Structures

Sloan

Hutchison

Tenne

et al. 1999

Journal of Solid State Chemistry

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“…Several papers propose simple chemical reactions and kinetic mechanisms to explain the synthesis of mono and multi layers, corroborated by theoretical calculations based on density functional theory [41], [79], [107], [128]. Several papers propose simple chemical reactions and kinetic mechanisms to explain the synthesis of mono and multi layers, corroborated by theoretical calculations based on density functional theory [41], [79], [107], [128].…”

Section: Growth Mechanismsmentioning

confidence: 83%

Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review

Bosi

2015

RSC Adv.

110

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Nanosheet materials such as graphene, boron nitride and transition metal dichalcogenides have gathered a lot of interest in recent years thanks to their outstanding properties and promises for future tecnology, energy generation and post-CMOS device concepts. Amongst these class of materials transition metal dichalcogenides based on molybdenum, tungsten, sulfur and selenium gathered a lot attention because of their semiconducting properties and the possibility to be synthesized by bottom up techniques. Vapour phase processes such as chemical vapour deposition permit to produce high quality layers and to precisely control their thickness. In order to target industrial applications of transition metal dichalcogenides it is important to develop synthesis methods that allow to scale up wafer size, and eventually integrate them with other technologically important materials. This review will cover all the currently proposed methods for the bottom up synthesis of transition metal dichalcogenides from the vapour phase, with particular emphasis on the precursors available and on the most common semiconductor techniques like metal organic chemical vapour deposition and atomic layer epitaxy. A summary of the most common characterization technique is included and an overview of the growth issues that still limit the application of TMD is given.

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Synthesis and characterization of inorganic fullerene-like WSe₂material

Cited by 51 publications

References 7 publications

Low Voltage Transmission Electron Microscopy of Graphene

Low Voltage Transmission Electron Microscopy of Graphene

Defect and Ordered Tungsten Oxides Encapsulated Inside 2H–WX2(X=S and Se) Fullerene-Related Structures

Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review

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Synthesis and characterization of inorganic fullerene-like WSe2material

Cited by 51 publications

References 7 publications

Low Voltage Transmission Electron Microscopy of Graphene

Low Voltage Transmission Electron Microscopy of Graphene

Defect and Ordered Tungsten Oxides Encapsulated Inside 2H–WX2(X=S and Se) Fullerene-Related Structures

Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review

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Synthesis and characterization of inorganic fullerene-like WSe₂material