Synthesis and Characterization of GaN Nanocrystalline Thin Films on Various Substrates by RF Magnetron Sputtering

Abstract

Gallium nitride (GaN) nanocrystalline (NC) thin films (TH) were deposited on different surfaces of material as substrates; quartz, glass as well as fluorine-doped tin oxide (FTO) using radio frequency (RF) reactive magnetron sputtering method. The effects of substrate type on structural and morphological properties of GaN-NCTH were studied. X-ray diffraction analyses and field-emission scanning electron microscopy (FESEM) images showed that the GaN particles have covered all surfaces of the substrates with a smooth arrangement. The root mean square (RMS) surface roughness was 30.8, 1.45 and 1.46 nm for the GaN-NCTH deposited on FTO, glass and quartz substrates, respectively. Based on the GaN-NCTH prepared onto glass substrate, the optical bandgap was calculated to be 3.38 eV.

GaAs1-xNx candidate material for a high efficiency based homojunction solar cell

“…III-V nitrides gallium nitride (GaN), aluminum nitride (AlN), and indium nitride (InN) and their alloys are semiconductor particularly attractive for applications in optoelectronics and microelectronics: Leds, Laser, solar cells, Schottky diodes, Hemts, SSDs [1][2][3][4][5]. Today the Synthesis of GaN is perfectly mastered [6][7][8][9][10][11].…”