2011
DOI: 10.1016/j.matdes.2010.12.001
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Synthesis and characterization of FeCoNiCrCu high-entropy alloy coating by laser cladding

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Cited by 263 publications
(115 citation statements)
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“…The content of Cu and Si was determined to be 70% and 10%, respectively. This is consistent with previous data showing that Cu is easily segregated during solidification and a small additional Si content benefits the cladding quality of the coating [14,15].…”
Section: Introductionsupporting
confidence: 93%
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“…The content of Cu and Si was determined to be 70% and 10%, respectively. This is consistent with previous data showing that Cu is easily segregated during solidification and a small additional Si content benefits the cladding quality of the coating [14,15].…”
Section: Introductionsupporting
confidence: 93%
“…Moreover, it was found that the hardness in the matrix of the Al 0.3 B 0.6 coating greatly increases and reaches approximately 502 HV 0.5 . This is significantly higher than the hardness reported by a number of previous studies [8,14]. These papers have reported that the HEAs with a FCC matrix generally have good plasticity and low hardness (mostly between 200 to 400 HV).…”
Section: Discussionmentioning
confidence: 63%
“…In the present study, two HEA films with components of CoCrFeNiCu and CoCrFeNiCuAl 2.5 were prepared using magnetron sputtering. The atomic arrangements of these two compositions are typical fcc and bcc structures [1,19,24,25], respectively. The roomtemperature creep behaviors were carefully investigated in nanoindentation with a Berkovich indenter.…”
Section: Introductionmentioning
confidence: 99%
“…Мікротвердість високоентропійних покрит-тів AlSiNiCoFeCr і AlSiNiCoFeCrТі, отриманих електронно-променевим наплавленням, значно вища, ніж у більшості покриттів із ВЕСів, отрима-них методами лазерної наплавки, мікротвердість яких становить 3-7,8 ГПа [15,16], та в 4-5 разів вища твердості сталевої підкладки (HV  2,2 ГПа). Висока мікротвердість покриттів AlSiNiCoFeCr та AlSiNiCoFeCrТі зумовлена композиційним фак-тором зміцнення на рівні кристалічної решітки, тобто формуванням ОЦК твердих розчинів замі-щення із сильним спотворенням кристалічної ре-шітки завдяки різниці атомних радіусів компо-нентів.…”
Section: 1 к 1unclassified