Synthesis and characterization of electroless deposited Co–W–P thin films as diffusion barrier layer

Aal, A. Abdel; Barakat, Hazem F.; Hamid, Z. Abdel

doi:10.1016/j.surfcoat.2008.03.023

Cited by 28 publications

(6 citation statements)

References 28 publications

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“…As mentioned above, electroless deposition also has superior advantage due to their simplicity and by having a better step coverage on complex shape substrate. The electroless NiB, CoB, CoW-X (X=P, B), CoSnB, Pd films have superior thermal stability as a capping layer or barrier layer [78][79][80][81][82][83].…”

Section: Sam Activationmentioning

confidence: 99%

30 years of electroless plating for semiconductor and polymer micro-systems

Shacham‐Diamand

Osaka

Okinaka

et al. 2015

Microelectronic Engineering

146

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Electroless deposition (ELD) is a well-known method for preparing thin films of metals and their alloys. It is a highly selective method allowing additive patterning of isolated and embedded structures on insulating substrates, e.g. glass, plastic or ceramic. It is a relatively low temperature (less than the boiling point of the electrolyte) and low cost process compared to other physical and chemical vapor deposition methods. ELD features uniform and normally conformal deposition (additives may affect its conformality) with low defect density and some unique material properties. In the last 30 years electroless plating of metals (e.g. copper, gold, nickel, cobalt, palladium, iron, silver, etc.) and their alloys, was demonstrated for micro system applications: microelectronics, micro electro mechanics, micro electro optics and microfluidics, micro fuel cells, micro batteries etc. Electroless plating was also demonstrated on nano structures, both artificial and natural. In this paper we present a short tribute to the recent advances in electroless plating in the last 30 years. Those advances and innovations are due to the work of many scientists and engineers on a time span started in the 19 th century. The progress in electroless plating followed the need and the trend for better metallization technologies for complex structures with critical dimensions that had been shrinking continuously in the last few decades.

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Section: Sam Activationmentioning

confidence: 99%

30 years of electroless plating for semiconductor and polymer micro-systems

Shacham‐Diamand

Osaka

Okinaka

et al. 2015

Microelectronic Engineering

146

View full text Add to dashboard Cite

show abstract

“…The hydrolysis investigation of DMAB shows that hydrolysis is pronounced at pH  5. So, a significant amount of DMAB is wasted by the hydrolysis, and consequently the electroless deposition in this range should be avoided [20,21]. In the pH region above 5, the consumption of DMAB by hydrolysis approaches a minimum.…”

Section: Niwb Electroless Platingmentioning

confidence: 99%

“…Consequently, the deposition efficiency decreases. Additionally, Mallory suggested that the preferred operating pH range for Ni deposition with DMAB is 6 to 7 (near neutral) [21]. Generally, DMAB has three active hydrogen atoms bonded to the boron, and theoretically should reduce three metal ions (such as Ni) for each ion of BH 3 OH -.…”

Section: Niwb Electroless Platingmentioning

confidence: 99%

Fabrication and characterization copper/diamond composites for heat sink application using powder metallurgy

Hamid¹,

Moustafa²,

Morsy³

et al. 2011

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Copper composites reinforced with diamond particles were fabricated by the powder metallurgical technique. Copper matrix and diamond powders were mixed mechanically, cold com- pacted at 100 bar then sintered at 900?C. The prepared powders and sintered copper/diamond composites were investigated using X-ray diffraction (XRD) and scanning electron microscope equipped with an energy dispersive X-ray analysis (SEM/EDS). The effect of diamond contents in the Cu/diamond composite on the different properties of the composite was studied. On fracture surfaces of the Cu/uncoated diamond composites, it was found that there is a very weak bonding between diamonds and pure copper matrix. In order to improve the bonding strength between copper and the reinforcement, diamond particles were electroless coated with NiWB alloy. The results show that coated diamond particles distribute uniformly in copper composite and the interface between diamond particles and Cu matrix is clear and well bonded due to the formation of a thin layer from WB2, Ni3B, and BC2 between Cu and diamond interfaces. The properties of the composites materials using coated powder, such as hardness, transverse rupture strength, thermal conductivity, and coefficient of thermal expansion (CTE) were exhibit greater values than that of the composites using uncoated diamond powder. Additionally, the results reveals that the maximum diamond incorporation was attained at 20 Vf%. Actually, Cu/20 Vf% coated diamond com- posite yields a high thermal conductivity of 430 W/mK along with a low coefficient of thermal expansion (CTE) 6 × 10–6/K

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“…Additionally, Co-W can function as both a diffusion barrier and seed layer, whereupon Cu can be directly electroplated [15]. Electroless methods used for the synthesis of Co-W-based thin films have been reported in the literature [16][17][18], but the direct electroplating of Cu on Co-W-based thin films is frankly unaddressed. The feasibility of Co-W as a directly electroplatable diffusion barrier layer to interconnect metallisation depends on its capability to grow a Cu film on top, with adequate morphological and microstructural characteristics and equivalent or superior electronic performance to conventional barrier layer systems.…”

Section: Introductionmentioning

confidence: 99%

Seedless Cu Electroplating on Co-W Thin Films in Low pH Electrolyte: Early Stages of Formation

et al. 2021

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The use of Ta/TaN barrier bilayer systems in electronic applications has been ubiquitous over the last decade. Alternative materials such as Co-W or Ru-W alloys have gathered interest as possible replacements due to their conjugation of favourable electrical properties and barrier layer efficiency at reduced thicknesses while enabling seedless Cu electroplating. The microstructure, morphology, and electrical properties of Cu films directly electrodeposited onto Co-W or Ru-W are important to assess, concomitant with their ability to withstand the electroplating baths/conditions. This work investigates the effects of the current application method and pH value of the electroplating solution on the electrocrystallisation behaviour of Cu deposited onto a Co-W barrier layer. The film structure, morphology, and chemical composition were studied by X-ray diffraction, scanning electron microscopy and atomic force microscopy, as well as photoelectron spectroscopy. The results show that the electrolyte solution at pH 1.8 is incapable of creating a compact Cu film over the Co-W layer in either pulsed or direct-current modes. At higher pH, a continuous film is formed. A mechanism is proposed for the nucleation and growth of Cu on Co-W, where a balance between Cu nucleation, growth, and preferential Co dissolution dictates the substrate area coverage and compactness of the electrodeposited films.

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Synthesis and characterization of electroless deposited Co–W–P thin films as diffusion barrier layer

Cited by 28 publications

References 28 publications

30 years of electroless plating for semiconductor and polymer micro-systems

30 years of electroless plating for semiconductor and polymer micro-systems

Fabrication and characterization copper/diamond composites for heat sink application using powder metallurgy

Seedless Cu Electroplating on Co-W Thin Films in Low pH Electrolyte: Early Stages of Formation

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