Synthesis and Characteristics of Cubic Silicon Carbide Nanospheres with Smooth Surfaces

Abstract

Large quantities of cubic silicon carbide (3C-SiC) nanospheres are synthesized on silicon wafer using zinc sulphide (ZnS) and activated carbon powder. The synthesized nanospheres have smooth surfaces and their diameters range from 20 to 430 nm. The growth of these nanospheres can be explained by a gas-solid model. ZnS powder plays a key role in the formation of activated Si and SiOx. Carburization of the activated Si and SiOx by CO gas leads to the formation of the 3C-SiC nanospheres. Special three-dimensional structure of the product is related to high concentrations of the reactants.

Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

“…5. At the same time and at temperatures more than 950 C, SiO vapour is produced from oxide layer as in equation 2 owires by oxygen assisted growth mechanism (OAG) [25], because in the free catalytic growth, the process is governed by oxygen to make the availability of growth species in gas form. When these species reach the substrate surface they react by forming nucleation seed (white dome), which was deposited on the surface due to temperature fluctuations and anchored to the silicon surface atoms as in Fig.…”