Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

Abstract

-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained -SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While -SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant -SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.