Synthesis and characterisation of metal suboxides for gas sensors

Calderer, J.; Molinàs, P; Sueiras, J.E.; Llobet, Eduard; Vilanova, X; Correig, X.; Masana, F.N.; Rodríguez, Ángel

doi:10.1016/s0026-2714(99)00306-6

Cited by 35 publications

(30 citation statements)

References 3 publications

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“…The PBE0-vdW(+d) results include the 4d electrons as valence states. Percentage differences to experiment are given in parenthesis and all values are inÅ, except cell volume which has units ofÅ 3 , the c/a ratio which is dimensionless and the amount of exchange used with PBE0, which is expressed as a percentage. The u value is the fractional coordinate of the Sn atom in the unit cell at (0.0000, 0.5000, u The calculated band structure along the high symmetry points 150 is displayed in Fig.…”

Section: Electronic Structurementioning

confidence: 99%

Understanding the defect chemistry of tin monoxide

et al. 2013

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Tin monoxide has garnered a great deal attention in the recent literature, primarily as a transparent p-type conductor. However, due to its layered structure (dictated by non-bonding dispersion forces) simulation via density functional theory often fails to accurately model the unit cell. This study applies a PBE0-vdW methodology to accurately predict both the atomic and electronic structure of SnO. Empirical van der Waals corrections improve the structure, with the calculated c/a ratio matching experiment, while the PBE0 hybrid-DFT method gives accurate band gaps (0.67 and 2.76 eV for the indirect and direct band gaps) and density of states which are in agreement with experimental spectra. This methodology has been applied to the simulation of the native intrinsic defects of SnO, to further understand the conductivity. The results indicate that n-type conductivity will not arise from intrinsic defects and that donor doping would be necessary. For p-type conduction, the Sn vacancy is seen to be the source, with the 0/À1 transition level found 0.39 eV above the valence band maximum. By considering the formation energies and transition levels of the defects at different chemical potentials, it is found that the p-type conductivity is sensitive to the O chemical potential. When the chemical potential is close to its lowest value (À2.65 eV here), the oxygen vacancy is stabilized which, whilst not leading to n-type conduction, could reduce p-type conduction by limiting the formation of hole states.

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Section: Electronic Structurementioning

confidence: 99%

Understanding the defect chemistry of tin monoxide

et al. 2013

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“…Whereas, few reports has been cited to investigate the micro-structural and electrical properties of SnO [8,9]. The SnO has been marked as anode material [10] and has been employed for other applications such as for gas sensitive material [11], coating substance [12], catalyst [12], precursor for the production of tin dioxide [13],and for p-channel thin film transistor [14,15]. The reported crystal habit of SnO is tetragonal crystal structure which is similar to that of the 'red' (a or litharge) modification of isovalent PbO [16].…”

Section: Introductionmentioning

confidence: 99%

Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

Ali

Muhammad

Hussain

et al. 2013

J Mater Sci: Mater Electron

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Mg doped SnO thin films were fabricated via electron beam evaporator on the glass substrate. The XRD analysis showed that reference and Mg doped SnO thin films were consisted of tetragonal a-SnO phase with preferred directions along (101) and (002) orientations. It was observed that the intensity of the diffraction pattern peaks increased and crystallite size decreased with the Mg doping. Scanning electron microscopy showed that the needlelike particles having length in the range of 0.4-0.6 lm with a diameter of 0.1-0.2 lm are sintered together to form a compact structure of Sn 1-x Mg x O layer. In the Raman spectrum, two active mode (A 2u and E u ) were observed for Sn 1-x Mg x O thin films. The complex plot (Nyquist plot) showed the data point laying on a single semicircle and the dc resistance increases with the increase of Mg doping concentration.

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“…For example, SnO 2 is used extensively as the active material in gas sensors, [1][2][3][4][5][6][7] as well as in systems where optical or electrical coatings are required, such as in low-emissivity architectural glass, 8 solar cells, 9 -11 liquid crystal displays, 10,11 photodetectors, 6,11 and video touch screens, 10 to name a few. Tin monoxide (SnO) also has attractive optical and electrical properties and can be found in gas-sensing applications 12 and as anodes in lithium-ion cells. 13 The performance of tin oxides is directly related to the particle size and compositional characteristics and consequently a strong function of the synthesis process used to generate the materials.…”

Section: T In Dioxide (Snomentioning

confidence: 99%

“…13 The performance of tin oxides is directly related to the particle size and compositional characteristics and consequently a strong function of the synthesis process used to generate the materials. 3,12,14 For example, SnO 2 sensor performance (e.g., stability, sensitivity, and selectivity, etc.) has been improved considerably by reducing the size of the SnO 2 particles used in the sensors 6,14 -16 and/or by adding dopants (typically noble metals or other metal oxides) to the tin dioxide.…”

Section: T In Dioxide (Snomentioning

confidence: 99%

“…20,23 In previous studies, the tin particles were typically on the order of 100 -400 nm 20,22,23 in size or larger. 23 Tin oxides can be generated using a variety of synthesis techniques including sol-gel processing, 15,18,19 chemical vapor deposition, 24 sputtering methods, 12 flame synthesis, 10,25,26 gasphase condensation 27 and mechanochemical processing. 28 Pure tin nanopowders with particles ϳ100 nm or less in size can be produced by reductive precipitation.…”

Section: T In Dioxide (Snomentioning

confidence: 99%

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Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnO_x, x= 0–2) Particles

Hall

Wang

Joy

et al. 2004

Journal of the American Ceramic Society

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Nanocrystalline SnO x particles (x ‫؍‬ 0 -2) were synthesized using tetramethyltin (Sn(CH 3 ) 4 ) vapor as the particle precursor reactant in hydrogen/oxygen/argon (H 2 /O 2 /Ar) flames. The particle composition and morphology were characterized using X-ray diffractometry, transmission electron microscopy, and nitrogen (N 2 ) surface adsorption. By controlling the concentration of oxygen in the reactant gases and the flame temperatures, metallic tin (Sn), tin monoxide (romarchite SnO), and/or tin dioxide (cassiterite SnO 2 ) were generated. The crystalline powders consisted of both discrete primary particles and agglomerates, with average primary particle sizes of 23-24 nm for SnO 2 and 69 nm for Sn (based on specific surface area measurements of bulk powders collected in the exhaust region of the flame). The compositional results were interpreted using equilibrium and detailed chemical kinetics models.

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Synthesis and characterisation of metal suboxides for gas sensors

Cited by 35 publications

References 3 publications

Understanding the defect chemistry of tin monoxide

Understanding the defect chemistry of tin monoxide

Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnO_x, x= 0–2) Particles

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Synthesis and characterisation of metal suboxides for gas sensors

Cited by 35 publications

References 3 publications

Understanding the defect chemistry of tin monoxide

Understanding the defect chemistry of tin monoxide

Study of microstructural, optical and electrical properties of Mg dopped SnO thin films

Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnOx, x= 0–2) Particles

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Combustion Synthesis and Characterization of Nanocrystalline Tin and Tin Oxide (SnO_x, x= 0–2) Particles