Synthesis & characterization of nanostructure VO₂ thin film

Abstract

Vanadium dioxides are strongly correlated systems which undergo an insulator-metal transition (IMT) from a low-temperature semiconducting phase to a high-temperature metallic phase. Among them, Vanadium dioxide (VO2) undergoes IMT close to room temperature, accompanied by a structural transition resulting change of several orders of magnitude in the electrical and optical properties. Here, we present the synthesis of VO2 by sol-gel process which employs cost-effective precursors to synthesize pure phase of VO2 thin films. The synthesized thin films were characterized using an X-ray diffraction (XRD) to confirm phase purity and high resolution scanning electron microscope (HR-SEM) to study the crystallite and particle size for the synthesized films. The film’s surface was analyzed by X-ray photoelectron spectroscopy (XPS) to determine the valence state and chemical composition of vanadium dioxide.

Stabilization of the VO2(M2) Phase and Change in Lattice Parameters at the Phase Transition Temperature of WXV1–XO2 Thin Films

“…Furthermore, the average crystalline size, d , of the four different VO 2 films fabricated was determined employing the full-width-half-maximum (fwhm) values obtained from diffraction peaks at ∼26.80° and ∼27.82° and Debye–Scherrer equation d = 0.9 λ β .25em normalcos nobreak0em0.25em⁡ θ …”