2019
DOI: 10.1039/c8ee03225d
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Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Abstract: Two-step sintering efficiently enhances zT by tuning the microstructure in a wide range from atomic defects to micrometer second phase.

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Cited by 131 publications
(142 citation statements)
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“…Therefore, the zT s are usually high in tellurides and selenides, but they are low in sulfides. This is the general phenomenon that has been observed in those well‐known TE materials such as Bi 2 X 3 ‐, SnX‐, and PbX‐based compounds (X = S, Se, and Te) . As shown in Figure , the zT values gradually improve as the anion element change from S to Se and then to Te.…”
supporting
confidence: 52%
“…Therefore, the zT s are usually high in tellurides and selenides, but they are low in sulfides. This is the general phenomenon that has been observed in those well‐known TE materials such as Bi 2 X 3 ‐, SnX‐, and PbX‐based compounds (X = S, Se, and Te) . As shown in Figure , the zT values gradually improve as the anion element change from S to Se and then to Te.…”
supporting
confidence: 52%
“…To secure high thermoelectric performance, high zT is required . As the temperature is generally limited by the application conditions or the employed material itself, the dominating factors for enhancing zT lie in enhancing S 2 σ, which is generally defined as the power factor to describe the electrical performance, as well as in reducing κ . For metals or degenerate semiconductors under the assumption of parabolic band and energy‐independent scattering approximation, S can be expressed as S =8π2kB23eh2 mTπ3n 23 where k B is the Boltzmann constant, h is the Plank constant, and m * is the density of state effective mass.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, based on the two‐step sintering process, Pan et al. shifted the temperature of the maximum zT to ∼380 K by increasing the Sb content in Bi x Sb 2‐ x Te 3.2 as shown in Figure (a) . Increasing the Sb content, the bandgap and antisite defects concentration increased and the hole concentration increased from ∼1×10 19 cm −3 for Bi 0.5 Sb 1.5 Te 3 sample to ∼2 and ∼3×10 19 cm −3 for Bi 0.4 Sb 1.6 Te 3 and Bi 0.3 Sb 1.7 Te 3 samples, respectively.…”
Section: Shifting the Maximum‐zt Temperature For Bi2te3‐based Polycrymentioning
confidence: 98%