2019
DOI: 10.1016/j.nanoen.2019.103922
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Synergistic effect of electron transport layer and colloidal quantum dot solid enable PbSe quantum dot solar cell achieving over 10 % efficiency

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Cited by 45 publications
(42 citation statements)
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“…Transient photocurrent (TPC) and transient photovoltage (TPV) measurements are applied to investigate the charge carrier transport and recombination rates in devices, respectively. [ 48 ] The TPC measurement shows a smaller lifetime for o ‐QD devices (Figure 7c), implying a better transport and a higher carrier collection efficiency in the o ‐QD devices. This result is in line with the GISAXS experiments that reveal the o ‐QD solids have denser particle packing behavior compared to the to ‐QD solids.…”
Section: Resultsmentioning
confidence: 99%
“…Transient photocurrent (TPC) and transient photovoltage (TPV) measurements are applied to investigate the charge carrier transport and recombination rates in devices, respectively. [ 48 ] The TPC measurement shows a smaller lifetime for o ‐QD devices (Figure 7c), implying a better transport and a higher carrier collection efficiency in the o ‐QD devices. This result is in line with the GISAXS experiments that reveal the o ‐QD solids have denser particle packing behavior compared to the to ‐QD solids.…”
Section: Resultsmentioning
confidence: 99%
“…Fourier transform infrared (FTIR) results show that the signal intensity of C-H modes at 2851 and 2921 cm −1 was dramatically reduced ( Figure S1, Supporting Information), indicating that the insulating OA ligands of pristine PbS CQDs were successfully replaced with the corresponding ligands in all three types of films after ligand exchange. [12,58] Transmission electron microscopy (TEM) images show that the morphology and size of PbS-PbX 2 -KI 3 CQDs have no significant change compared with PbS-PbX 2 -KI and pristine PbS-OA CQDs ( Figure S2, Supporting Information). X-ray diffraction measurements confirmed that ligand exchanged PbS CQDs retain a rock salt without impurity phase, as shown in Figure S3 in the Supporting Information, indicating that KI 3 addictive does not damage the PbS CQDs.…”
Section: Doi: 101002/advs202003138mentioning
confidence: 99%
“…More importantly, the doping state of QDs must be controlled to fabricate high‐performance QD solar cells and the halide passivation of QDs must be suitable for p‐n junction design. [ 12,64,65 ] In case of Si, high doping results in a long diffusion length with improved mobility, enabling Si solar cells to have a thickness greater than hundreds micrometers. However, the diffusion length produced by QDs is currently on the order of 10 −2 cm 2 V −1 s −1 today.…”
Section: Electrical Design For Qd Pvsmentioning
confidence: 99%