Synergist effect of potassium periodate and potassium persulfate on improving removal rate of Ruthenium during chemical mechanical polishing

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

“…After adjustment, the pH value can finally be controlled at 10, which is in line with the normal pH range of conventional alkaline slurries. In addition to the impact of micro-jets caused by bubble collapse mentioned above, the dispersibility of abrasives [35] and the chemical corrosion of reagents [36] will also have a great impact on MRR.…”

Effect of ethylenediamine on CMP performance of ruthenium in H2O2-based slurries

“…To meet the requirements of efficient ruthenium removal, the researchers screened a number of oxidizers, such as KMnO 4 (potassium permanganate), KClO 4 (potassium perchlorate), NaIO 4 (sodium periodate), K 3 [Fe(CN) 6 ] (potassium ferricyanide), potassium peroxymonosulfate (oxone), K 2 S 2 O 8 (potassium persulfate), KIO 4 (potassium periodate), (NH 4 ) 2 S 2 O 8 (ammonium persulphate) and H 2 O 2 (hydrogen peroxide), among which KIO 4 and H 2 O 2 receive widespread attention. [7][8][9]12,[14][15][16][17][18][19][20][21] H. Cui et al 22 studied the effect of various oxidizers on the removal rate of ruthenium from the perspective of surface corrosion and oxidation. The experimental results suggested that the existence of IO 4…”

Effect of Potassium Ferrocyanide on CMP Performance of Ruthenium in H2O2-based Slurries

“…Among the materials mentioned above, ruthenium gathers favorable comments and widespread attention because of its high melting point, lower resistivity compared to tantalum, good adhesion and wettability with copper, and exceptional barrier properties. 17,[26][27][28] It is also feasible to accomplish conformal electroplating of copper on the ruthenium surface without copper seed layer, while there is no intermetallic compound between copper and ruthenium even after annealing at 800 °C. 27 Although ruthenium, being a promising barrier material, has many of the aforementioned advantages, chemical mechanical polishing(CMP) after deposition of ruthenium barrier is challenging as a consequence of its high mechanical hardness(6.5 Mohs) and strong chemical inertness, which pushes the approach to actualize high removal rate of ruthenium towards screening for powerful and valid oxidizers.…”