Effect of ethylenediamine on CMP performance of ruthenium in H<sub>2</sub>O<sub>2</sub>-based slurries

Xu, Yue; Ma, Tengda; Liu, Yuling; Tan, Baimei; Zhang, Shihao; Wang, Yazhen; Song, Guoqiang

doi:10.1039/d1ra08243d

Cited by 11 publications

(9 citation statements)

References 50 publications

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“…54 The specific reaction is shown in formula ( 2)- (7). 55 When DEA is used as a pH regulator, the fitting image of XPS is shown in Fig. 12b.…”

Section: Resultsmentioning

confidence: 99%

Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions

Dong,

Niu,

Liu

et al. 2024

ECS J. Solid State Sci. Technol.

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For Ruthenium (Ru)-based copper (Cu) interconnects Cu film chemical mechanical polishing (CMP), it is crucial to select appropriate pH regulators in the slurry to ensure the chemical reactions and maintain the stability of the polishing chemical environment. In this study, the effects of inorganic pH regulator KOH, organic pH regulator diethanolamine (DEA), and 2-amino-2-methyl-1-propanol (AMP) on CMP and slurry properties of Cu film were compared. It was found when using AMP as a pH regulator, the Cu/Ru removal rate selectivity (RRS) can reach 598:1, the surface roughness of Cu film decreased to 0.76 nm, and the slurry can remain stable for at least 7 days. The performance order of the three pH regulators is AMP＞KOH＞DEA. Meanwhile, through experimental results and test analysis, it has been confirmed that AMP can also play a multifunctional role as a complexing agent, dispersant, and surfactant. Therefore, AMP can replace KOH as a new pH regulator in weak alkaline slurries. This result plays an important role in guiding the selection of organic pH regulators in the optimization of Cu film CMP slurry.

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“…54 The specific reaction is shown in formula ( 2)- (7). 55 When DEA is used as a pH regulator, the fitting image of XPS is shown in Fig. 12b.…”

Section: Resultsmentioning

confidence: 99%

Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions

Dong,

Niu,

Liu

et al. 2024

ECS J. Solid State Sci. Technol.

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“…[ 198 ] In addition to oxidizing agents, complexing agents like ethylenediamine (EDA) are being investigated because they can accelerate material removal by chelating metal ions to create soluble species in CMP (Figure 8c ). [ 199 ]…”

Section: Next‐generation Interconnect Materialsmentioning

confidence: 99%

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confidence: 99%

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

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Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.

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“…However, Ta cannot achieve conformal deposition in this structure and there are issues with copper (Cu) deposition, such as incomplete Cu gap-filling. 3,4 Therefore, the Ta/TaN structure can no longer meet the needs of integrated circuit development. The search for new barrier layer materials aims to reduce the resistance contribution of the barrier layer, minimize its thickness, and improve the volume fraction of Cu in interconnect lines.…”

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confidence: 99%

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

Fang,

Yang,

Pan

et al. 2024

ECS J. Solid State Sci. Technol.

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In the localized and global chemical mechanical planarization (CMP) process of Co barrier layers, corrosion inhibitors play a crucial role in the removal rate (RR) of Co and the post-polishing surface quality. In this study, quantum chemical calculations were employed to investigate the molecular reactivity of benzotriazole (BTA), 5-methyl benzotriazole (TTA), and 2,2'-{[(methyl-1H-benzotriazol-1-yl)methyl]imino}bis-ethanol (TT-LYK), and their inhibitory performance was predicted to follow the order of TT-LYK > TTA > BTA. The experimental results validated the accuracy of the predicted order under static conditions. However, the performance order of the inhibitors shifted to TTA > BTA > TT-LYK due to varying degrees of damage caused by mechanical friction to the inhibitory film. Nevertheless, all three inhibitors are capable of effectively inhibiting the Co RR to meet industrial requirements. Ultimately, considering the outstanding inhibitory performance of TT-LYK and its ease of removal during post-cleaning processes, TT-LYK is determined as the most promising inhibitor for Co barrier layer CMP.

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Effect of ethylenediamine on CMP performance of ruthenium in H₂O₂-based slurries

Abstract: In the ruthenium CMP process, the removal rate of ruthenium can be effectively improved by adding EDA and H2O2 into SiO2-based slurries.

Cited by 11 publications

References 50 publications

Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions

Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

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Effect of ethylenediamine on CMP performance of ruthenium in H2O2-based slurries

Abstract: In the ruthenium CMP process, the removal rate of ruthenium can be effectively improved by adding EDA and H2O2 into SiO2-based slurries.

Cited by 11 publications

References 50 publications

Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions

Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

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Effect of ethylenediamine on CMP performance of ruthenium in H₂O₂-based slurries