Synergetic approach to studying material sputtering under ion bombardment

Maksimov, S. E.; Оксенгендлер, Б. Л.; Turaev, N.Yu.

doi:10.1134/s1027451013020407

Cited by 8 publications

(3 citation statements)

References 13 publications

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“…Analysis of this system in the framework of the synergetic master equation [ 17 , 18 , 25 , 26 ] leads to the steady-state probability of generation Р s ( X ), where Х = V is the number of vacancies (interstitial sites) Here, В = κ 1 А /κ 2 ; Р = κ 3 /κ 1 ; R = κ 4 /κ 2 . The extrema (6) give the relation between В and Х : the plot of which has an S-shaped form ( Fig.…”

Section: Synergetics Of Radiation Processes During High-energy Ion Ir...mentioning

confidence: 99%

“… Lamerey diagram (9) that demonstrates the sequential combination of two phases of laminar (from α x 0 to the region of the maximum of the reverse parabola) and turbulent (the region of intersecting the reverse parabola and the straight line going through the origin of coordinates) [ 16 , 17 ]. …”

Section: Synergetics Of Radiation Processes During High-energy Ion Ir...mentioning

confidence: 99%

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On the Concept of “Complexity” in Radiation Physics

Оксенгендлер

Zatsepin²,

Ashirmetov³

et al. 2022

J. Surf. Investig.

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The concept of “complexity” is considered in relation to radiation processes in condensed matter. It is shown that a combination of such properties as nanoscale, fractality, low dimension, chirality, and hierarchy in combination with high nonequilibrium create conditions for the manifestation of unusual “emergent” radiation effects (radiation synergetics, great dose reduction of threshold radiation effects, etc.). Examples of radiation effects in living and inanimate systems, interpreted within the framework of the concept of “complexity”, are presented. An overview of both previously obtained and new results is presented.

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Section: Synergetics Of Radiation Processes During High-energy Ion Ir...mentioning

confidence: 99%

Section: Synergetics Of Radiation Processes During High-energy Ion Ir...mentioning

confidence: 99%

On the Concept of “Complexity” in Radiation Physics

Оксенгендлер

Zatsepin²,

Ashirmetov³

et al. 2022

J. Surf. Investig.

Self Cite

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“…This creates specific conditions: wide variety of defects (due to multi-component material) and a high degree of non-equilibrium of the open system -all of this radiation is controlled by the selection of parameters. These two conditions allow the manifestation of hope for the widest number of conventional radiation physical processes [17], but also the implementation of a new and very special class effect is called "synergy radiation" [18]. Based on this separation, we will consider here first option of radiation to stimulate the formation of the rough interface.…”

Section: Controlling Of the Interface Fractal Structure By Radiationmentioning

confidence: 99%

Role of Fractals in Perovskite Solar Cells

Оксенгендлер

Ashurov

Maksimov

et al. 2017

Eurasian Chem. Tech. J.

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The interface engineering plays important role in fabrication of the tandem and perovskite based solar cells. Recent experiments show that the interface effects caused by the coupling of the electron bands and the pairing of geometry of contacting surfaces. In particular, it has been experimentally revealed that the transition from planar to the rough interface improves many photoelectric parameters of the<br />device. It means that the value of the fractal dimension of the interface may be key factor in device performance. It is possible to formulate two problems: firstly, the understanding on simple models why the electrical properties at fractal interfaces are improved, and, secondly, to discuss one of the most promising approaches in modern electronics, namely technology of radiation applications in the creation of rough interfaces. Thirdly, the problem of photodegradation is analyzed in detail in the structures containing the fractal interfaces. On the basis of the constructed models, it was found: i) increase of roughness (fractal) of interface structure can enhance the role of total internal light reflection effect, thereby increasing the effective light path, and therefore, the number of generated e-h-pairs; ii) the curvature of the surface leads to the shift of Tamm levels both to the borders of allowed bands, and to the middle of the band gap; it opens the way of the control of carrier recombination on the interface; iii) surface Tamm orbitals interact differently each with other on the convex and concave areas; it leads to the different probability of defect formation and, consequently, reduces the fractal interface, inhibiting the effect of increasing of the photocurrent associated with the fractal interface (new channel of photodegradation).

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