Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Lankinen, Aapo; Knuuttila, L.; Kostamo, Pasi; Tuomi, T.; Lipsanen, Harri; McNally, Patrick J.; O'Reilly, Lisa

doi:10.1016/j.jcrysgro.2009.08.032

Cited by 10 publications

(4 citation statements)

References 32 publications

(57 reference statements)

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“…After the GaAs nucleation a 400 nm thick In 0.01 Ga 0.99 As buffer was grown at 100 mbar. The added 1% indium was used to adapt the slightly larger lattice of the Ge compared to GaAs [18]. Then 1 μm thick InGaP layers were grown on the InGaAs buffer.…”

Section: Methodsmentioning

confidence: 99%

Control wafer bow of InGaP on 200 mm Si by strain engineering

Wang

Bao

Made

et al. 2017

Semicond. Sci. Technol.

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When epitaxially growing III-V compound semiconductors on Si substrates the mismatch of coefficients of thermal expansion (CTEs) between III-V and Si causes stress and wafer bow. The wafer bow is deleterious for some wafer-scale processing especially when the wafer size is large. Strain engineering was applied in the epitaxy of InGaP films on 200 mm silicon wafers having high quality germanium buffers. By applying compressive strain in the InGaP films to compensate the tensile strain induced by CTE mismatch, wafer bow was decreased from about 100 μm to less than 50 μm. X-ray diffraction studies show a clear trend between the decrease of wafer bow and the compensation of CTE mismatch induced tensile strain in the InGaP layers. In addition, the anisotropic strain relaxation in InGaP films resulted in anisotropic wafer bow along two perpendicular (110) directions. Etch pit density and plane-view transmission electron microscopy characterizations indicate that threading dislocation densities did not change significantly due to the lattice-mismatch applied in the InGaP films. This study shows that strain engineering is an effective method to control wafer bow when growing III-V semiconductors on large size Si substrates.

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Section: Methodsmentioning

confidence: 99%

Control wafer bow of InGaP on 200 mm Si by strain engineering

Wang

Bao

Made

et al. 2017

Semicond. Sci. Technol.

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“…Regarding the Ga(In)As MC, we believe that the improvement comes from a better crystalline quality in this material as a result of the thinner nucleation and buffer layers used. In other words, for nucleation B, the formation of morphological defects such as arrow heads or truncated pyramids [38,39] might be minimized with thin GaInP nucleation layers of 50 nm. Additionally, the Ga(In)As buffer layer of 500 nm smooths out the morphological issues caused by such defects leading to a good template for the growth of the upper III-V layers.…”

Section: Resultsmentioning

confidence: 99%

Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells

Barrutia

García

Barrigón

et al. 2020

Solar Energy Materials and Solar Cells

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This paper addresses the influence of III-V nucleation routines on Ge substrates for the growth of high efficiency multijunction solar cells. Three exemplary nucleation routines with differences in thickness and temperature were evaluated. The resulting open circuit voltage of triple-junction solar cells with these designs is significantly affected (up to 50 mV for the best optimization routine), whereas minimal differences in short circuit current are observed. Electroluminescence measurements show that both the Ge bottom cell and the Ga(In)As middle cell present a V OC gain of 25 mV each. This result indicates that the first stages of the growth not only affect the Ge subcell itself but also to subsequent subcells. This study highlights the impact of the nucleation routine design in the performance of high efficiency multijunction solar cell based on Ge substrates.

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“…On the one hand, a high quality template for further III-V epitaxial growth has to be created, with an electrically neutral heterointerface, and no anti-phase domains (APD), misfit dislocations, hillocks or other kinds of 3D defects [3,4] that affect the morphology of the epilayers. On the other hand, the diffusion processes that take place across the heterointerface have to be controlled.…”

Section: Introductionmentioning

confidence: 99%

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

Barrigón

Galiana

Rey‐Stolle

2011

Journal of Crystal Growth

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This work summarizes the observations made on the variation and time evolution of the reflectance Kevwordsanisotropy signal during the MOVPE growth of GalnP nucleation layers on Germanium substrates. This Al Reflectance anisotropy spectroscopy ' n s '' u monitoring tool is used to assess the impact of different nucleation routines and reactor Al. Growth monitoring conditions on the quality of the layers grown. This comparison is carried out by establishing a A2. Metalorganic vapor phase epitaxy correlation between reflectance anisotropy signature at 2.1 eV and the morphology of the epilayers Bl. Phosphides evaluated by atomic force microscopy (AFM). This paper outlines the potential of reflectance anisotropy B2. Semiconducting germanium t0 pre dict, explore, and therefore optimize, the best growth conditions that lead to a high quality III-V epilayer on a Ge substrate.

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Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Cited by 10 publications

References 32 publications

Control wafer bow of InGaP on 200 mm Si by strain engineering

Control wafer bow of InGaP on 200 mm Si by strain engineering

Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (1 0 0)

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