Synchrotron radiation investigation of H: GaAs(110)

Astaldi, C.; Sorba, L.; Rinaldi, Cristina; Mercuri, R.; Nannarone, Stefano; Calandra, C.

doi:10.1016/0039-6028(85)90873-8

Cited by 35 publications

(2 citation statements)

References 6 publications

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“…When an adsorbed atom bonds to one of the buckled dimmer, it operates to release the buckling, as hydrogen adsorption on the GaAs(110) surface lifts the buckling of the surface Ga-As dimer. This effect of H adsorption is supported experimentally [20][21][22][23][24][25][26] and theoretically. [27][28][29][30][31][32] Adsorption on the InAs(110) surface leads to donor-type surface states above but near the CBM.…”

Section: Introductionsupporting

confidence: 53%

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

2012

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Adsorption on an n-type InAs surface often induces a gradual formation of a carrieraccumulation layer at the surface. By means of high-resolution photoelectron spectroscopy (PES), Betti et al. made a systematic observation of subbands in the accumulation layer in the formation process. Incorporating a highly nonparabolic (NP) dispersion of the conduction band into the local-density-functional (LDF) formalism, we examine the subband structure in the accumulation-layer formation process. Combining the LDF calculation with the PES experiment, we make an accurate evaluation of the accumulated-carrier density, the subband-edge energies, and the subband energy dispersion at each formation stage. Our theoretical calculation can reproduce the three observed subbands quantitatively. The subband dispersion, which deviates downward from that of the projected bulk conduction band with an increase in wave number, becomes significantly weaker in the formation process.

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Section: Introductionsupporting

confidence: 53%

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

2012

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“…However, when a hydrogen ͑H͒ atom bonds to one of the relaxed dimer, it operates to remove the relaxation of the dimer, which results in the appearance of a midgap surface state from the other atom of the dimer. The fact that H adsorption removes the surface relaxation is supported both experimentally [12][13][14][15][16][17][18] and theoretically. [19][20][21][22][23][24] The theoretical calculation for the case of submonolayer H coverages in Refs.…”

Section: Introductionmentioning

confidence: 56%

Evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process

Inaoka

2001

Phys. Rev. B

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We investigate the evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process. The elementary excitations analyzed are two coupled plasmon-phonon modes and a surface optical-phonon mode involving screening charges. Surface excitations of free carriers are calculated by taking account of the Coulomb interaction between carriers, the dynamical exchange-correlation effect, and the coupling with surface polar phonons, on the basis of thermal-equilibrium states calculated self-consistently by the local-density approximation. We focus our attention on the coupling character and the spatial structure of each surface-excitation mode, as well as the energy dispersion and the energy-loss intensity involved in the excitation. The induced charge-density distribution in the excitation mode is composed of a carrier component due to carrier density fluctuation, a phonon component arising from longitudinal polarphonon polarization, and two on-surface components originating from the termination of the polar phonon and background polarization at the surface. The coupling character is elucidated by the phase relation and the amplitude ratio among these induced charge components. The spatial structure is visualized by the contour map of the induced charge-density distribution. We follow the variation in the coupling character and the spatial structure in the depletion-layer formation process. Our analysis gives a clear explanation of the variation in each of the three loss peaks in the electron energy-loss spectrum.

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Electronic Properties of Hydrogen Exposed III–V Semiconductor Surfaces

Nannarone

1997

phys. stat. sol. (a)

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A critical review of experimental results aiming at determining the atomic geometry and the electronic properties of the hydrogenated (110) surfaces of III–V semiconductor compounds is given. Results deal mainly with the prototype GaAs(110) surface. Experimental results include photoemission, electron energy loss, metastable deexcitation spectroscopy, Auger electron spectroscopy, photoelectron diffraction and grazing incidence X‐ray diffraction data. A unified picture for the hydrogenated surface can be derived. It is characterized by an almost nonrelaxed substrate (or even counter‐relaxed), absence of gap states and, up to one monolayer of coverage, by a surface order and an almost preserved substrate stoichiometry. Higher exposures induce surface etching with changes of Ga to As concentration ratio.

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Synchrotron radiation investigation of H: GaAs(110)

Cited by 35 publications

References 6 publications

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

Accurate evaluation of subband structure in a carrier accumulation layer at an n-type InAs surface: LDF calculation combined with high-resolution photoelectron spectroscopy

Evolution of elementary excitations at a doped polar semiconductor surface in a depletion-layer formation process

Electronic Properties of Hydrogen Exposed III–V Semiconductor Surfaces

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