2021
DOI: 10.1038/s41565-020-00826-8
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Symmetry-dependent field-free switching of perpendicular magnetization

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Cited by 165 publications
(115 citation statements)
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“…Previously, we demonstrated current‐induced field‐free switching in a simple bilayer structure of L1 1 ‐CuPt/CoPt, owing to an exotic symmetry‐breaking SOT arising from a low‐symmetry point group. [ 38 ] In this work, we show that the mode of field‐free switching in the above bilayer is dominated by domain nucleation, which has been rarely employed for neuromorphic computing. Comparing to domain wall propagation, domain nucleation has a much less stringent requirement on defects, since they naturally form the basis of intermediate states.…”
Section: Introductionmentioning
confidence: 97%
“…Previously, we demonstrated current‐induced field‐free switching in a simple bilayer structure of L1 1 ‐CuPt/CoPt, owing to an exotic symmetry‐breaking SOT arising from a low‐symmetry point group. [ 38 ] In this work, we show that the mode of field‐free switching in the above bilayer is dominated by domain nucleation, which has been rarely employed for neuromorphic computing. Comparing to domain wall propagation, domain nucleation has a much less stringent requirement on defects, since they naturally form the basis of intermediate states.…”
Section: Introductionmentioning
confidence: 97%
“…The third direction is the field-free magnetization switching using 2D vdW materials with low crystal symmetries. The crystal symmetry induced out-of-plane damping-like SOT in some 2D vdW materials suggests a strategy for field-free switching of perpendicularly magnetize system (Liu et al, 2021). To date, various approaches for field-free SOT-induced magnetization switching of PMA systems have been proposed and demonstrated.…”
Section: Conclusion and Future Perspectivementioning
confidence: 99%
“…One could envision a demonstration of outof-plane magnetization switching at very low current densities, potentially even more efficient than recently demonstrated in low-symmetry CuPt/ CoPt bilayers. 9 Finally, it is still an open question if the various properties 10 of WTe 2 could be used to tune or enhance the spin-orbit torque, and if they are present in the disordered WTe x films studied by Li et al These properties, such as ferroelectricity, conducting edge states, and superconductivity, could lead to different mechanisms for the generation of spin-torques. Furthermore, it will also be interesting to observe charge-to-spin conversion phenomena in WTe 2 by tuning the Fermi level close to its topological bands, where a significant effect is expected.…”
Section: Previewsmentioning
confidence: 99%