Two-Dimensional Van Der Waals Materials for Spin-Orbit Torque Applications

Tian, Mingming; Zhu, Yonghui; Jalali, Milad; Jiang, Wei; Liang, Jinxing; Huang, Zhaocong; Qian, Chen; Zeng, Zhongming; Zhai, Ya

doi:10.3389/fnano.2021.732916

Cited by 9 publications

(5 citation statements)

References 107 publications

(125 reference statements)

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“…The search for suited 2DMs combination to enhance spin transfer capability, as for instance manifested through the spin torque effect, has also experienced substantial progress. On the theoretical side, advances have revealed novel features unique to 2DMs [32][33][34][35], whereas experiments have started to produce significant torque efficiencies, which will serve as basis for further development [36][37][38][39]. Layered materials such as WTe 2 [40][41][42][43] or TaIrTe 4 [44,45] with reduced symmetries are also generating unconventional spin-orbit torques.…”

Section: Progress Over More Than a Decadementioning

confidence: 99%

Spintronics with two-dimensional materials and van der Waals heterostructures

Roche,

van Wees,

Garello

et al. 2024

2D Mater.

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We briefly summarize more than fifteen years of intense research in2D materials (2DM)-based spintronics, which has led to an in-depth understandingof fundamental spin transport mechanisms, novel functionalities in magnetic tunneljunctions and spin orbit torque devices, and the formidable and unprecedentedcapability of proximity effects to make graphene a spin active material. Although theportfolio of functional 2DM-based devices and related heterostructures is continuouslyincreasing, we outline key technological challenges that are still impeding practicalspintronic applications in spin-logics and non-volatile memory technologies. Weconclude by mentioning current and future directions which will maintain themomentum of the

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Section: Progress Over More Than a Decadementioning

confidence: 99%

Spintronics with two-dimensional materials and van der Waals heterostructures

Roche,

van Wees,

Garello

et al. 2024

2D Mater.

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“…For all proposed solutions, quantum materials are very promising to overcome current limitations and improve the overall device energy efficiency. In particular, topological insulators and Rashba systems represent a viable alternative to widely-used heavy metals for the excitation of SWs via charge-to-spin conversion with an efficiency gain of a factor of 100 [80,81]. Multiferroic quantum materials displaying spin-momentum locking (GeTe, SnTe, etc.)…”

Section: Wave Computingmentioning

confidence: 99%

From Quantum Materials to Microsystems

Bertacco

Panaccione

Picozzi³

2022

Materials

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The expression “quantum materials” identifies materials whose properties “cannot be described in terms of semiclassical particles and low-level quantum mechanics”, i.e., where lattice, charge, spin and orbital degrees of freedom are strongly intertwined. Despite their intriguing and exotic properties, overall, they appear far away from the world of microsystems, i.e., micro-nano integrated devices, including electronic, optical, mechanical and biological components. With reference to ferroics, i.e., functional materials with ferromagnetic and/or ferroelectric order, possibly coupled to other degrees of freedom (such as lattice deformations and atomic distortions), here we address a fundamental question: “how can we bridge the gap between fundamental academic research focused on quantum materials and microsystems?”. Starting from the successful story of semiconductors, the aim of this paper is to design a roadmap towards the development of a novel technology platform for unconventional computing based on ferroic quantum materials. By describing the paradigmatic case of GeTe, the father compound of a new class of materials (ferroelectric Rashba semiconductors), we outline how an efficient integration among academic sectors and with industry, through a research pipeline going from microscopic modeling to device applications, can bring curiosity-driven discoveries to the level of CMOS compatible technology.

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“…Although SOT is not forbidden in bulk materials, it is commonly found at the interface of FM materials and heavy metals, where both field-like and damping-like contributions lies in-plane. Thus, out-of-plane SOT switching of FM materials with perpendicular magnetic anisotropy, such as vdW magnetic 2D materials, is quite envisaged for research studies and design of magnetic materials [118,119]. The performance of spintronic devices based on SOT depends on the energy transfer and dissipation associated with magnetization reversal.…”

Section: Magnetization Dynamicsmentioning

confidence: 99%

“…The performance of spintronic devices based on SOT depends on the energy transfer and dissipation associated with magnetization reversal. Thus, the crossover between 2D vdW materials and SOT opens the possibility of building spintronic devices down to single atomic layers [119].…”

Section: Magnetization Dynamicsmentioning

confidence: 99%

Unveiling ferromagnetism and antiferromagnetism in two dimensions at room temperature

Araujo¹,

Zarpellon²,

Mosca³

2022

J. Phys. D: Appl. Phys.

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The aim of this work is to present an overview and a critical discussion on two-dimensional materials and functional nanostructures exhibiting ferromagnetic and antiferromagnetic long-range ordering at or above room temperature. We specially describe and discuss the series of results concerning two-dimensional magnetism originated from intrinsic and induced d magnetic moments in low-dimensional nanostructured materials. Selected materials showing two-dimensional magnetic properties close to room temperature are classified as atomic monolayers, natural and artificial van der Waals layers, magneto-lamellar intermetallic compounds, and nanostructured materials containing native and artificially created defects that originate magnetic moments in networks with two-dimensional interconnectivity. To make the point on these materials, we describe their atomic and electronic structures as well as magnetic interaction mechanisms responsible for magnetic behavior. Theoretical backgrounds for understanding the correlations between structure and magnetic properties are examined. Special emphasis on the possible applications of two-dimensional magnetism for developments of new devices in the fields of spintronics, spin-orbitronics, magnonics, valleytronics and twistronics, among other emergent technologies are discussed.

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Two-Dimensional Van Der Waals Materials for Spin-Orbit Torque Applications

Cited by 9 publications

References 107 publications

Spintronics with two-dimensional materials and van der Waals heterostructures

Spintronics with two-dimensional materials and van der Waals heterostructures

From Quantum Materials to Microsystems

Unveiling ferromagnetism and antiferromagnetism in two dimensions at room temperature

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