Half-Heusler intermetallic compounds have been an important
subject
of interest in the field of semiconductors for years, but have been
studied more for their bulk structure and rarely for their two-dimensional
structure. Here, a novel two-dimensional semiconductor material with
the chemical formula TiPtGe and an indirect bandgap of 1.27 eV has
been developed on the basis of first-principles calculations. Significantly,
it could be transformed from an indirect to a direct bandgap semiconductor
under small biaxial in-plane strain. Given the similar lattice parameters
and symmetry with the single-element two-dimensional material antimonene,
we have attempted to form a vertical heterostructure of the two. The
calculated results show that the heterostructure can be transformed
from an indirect to a direct bandgap by increasing the number of TiPtGe
layers. Further calculated results of the optical properties show
that increasing the number of TiPtGe layers in the heterostructure
could significantly improve the absorption efficiency in the visible
region. This provides a new possibility for the application of antimonene
in optoelectronic devices.