2023
DOI: 10.1039/d2nj06198h
|View full text |Cite|
|
Sign up to set email alerts
|

First principles study of electronic properties and optoelectronic performance of type-II SiS/BSe heterostructure

Abstract: The construction of van der Waals heterostructures are extensively studied for designing new devices for potential applications in nanotechnology and renewable energy. In this work, we perform the first-principles calculations...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

1
0
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
3

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 62 publications
(88 reference statements)
1
0
0
Order By: Relevance
“…37 The BY–MX 2 (BAs–WSe 2 and BP–WS 2 ) heterostructure exhibit a direct type-II (type-I) band alignment. 38 Similar trends were observed in other vdW heterostructures including SiS/P (SiS/SiC), 39–41 P–BSe and P/X 2 , 42 and group III–VI and group IV–VI monolayer-based heterostructures. 43–45 Despite these distinctive physical properties, the integration of BX and SiS-based vdW heterostructures remains unexplored for the practical design of new nano-based devices with exceptional functionalities.…”
Section: Introductionsupporting
confidence: 80%
“…37 The BY–MX 2 (BAs–WSe 2 and BP–WS 2 ) heterostructure exhibit a direct type-II (type-I) band alignment. 38 Similar trends were observed in other vdW heterostructures including SiS/P (SiS/SiC), 39–41 P–BSe and P/X 2 , 42 and group III–VI and group IV–VI monolayer-based heterostructures. 43–45 Despite these distinctive physical properties, the integration of BX and SiS-based vdW heterostructures remains unexplored for the practical design of new nano-based devices with exceptional functionalities.…”
Section: Introductionsupporting
confidence: 80%