Symmetric and asymmetric GaAs/Al_0.3Ga_0.7As double quantum well subjected to hydrostatic pressure and applied electric field

Abstract

The combined electric field and hydrostatic pressure effects on the binding energy of a shallow-donor impurity in symmetrical and asymmetrical GaAs/Al 0.3 Ga 0.7 As double quantum wells are calculated using a variational procedure within the effective-mass approximation. Double quantum wells are examinated considering impurities situated at the well centers. Due to the applied electric field both structures become asymmetric from the impurity potential point of view. According to the dimensions the structures are symmetric (equal well lengths) and asymmetrical (different well lengths).

Simultaneous effects of hydrostatic pressure and applied electric field on the impurity-related self-polarization in GaAs/Ga1−xAlxAs multiple quantum wells

“…Morales et al studied the polarization caused by an applied electric field on donor impurities [5] and Morales and Kasapoglu have reported the combined effects of the hydrostatic pressure and electric field on shallow donor impurities in double QW [6,7]. Furthermore, Morales et al studied the effects of hydrostatic pressure and electric field on the polarizability of the impurities in these low-dimensional systems.…”

Donor-related optical absorption spectra for a GaAs-Ga0.7Al0.3As double quantum well under hydrostatic pressure and applied electric field effects

“…Several studies about the effects of an external electric field and hydrostatic pressure on the binding energy and density of impurity states associated with shallow donors and acceptors in GaAs − Ga 1−x Al x As semiconductor heterostructures, have been performed. Theoretical studies for donor-and acceptor-related optical-absorption and PL spectra in low dimensional systems have reported the presence of well defined structures related to on center and on edge impurities [1][2][3][4][5][6][7].…”