Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

“…The special P-gate is only in SP-SJ HEMT and CS-SJ HEMT for comparison. The gate looks like the letter 'T', and the Mgdoped [22]- [24] p-type GaN cap layer is divided into two pieces with the same size T c . The bottom of the gate and the top of the AlGaN barrier layer are separated by SiN.…”

A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs

“…A 2000 nm uGaN epitaxial layer was grown on the surface of the buffer layer, on top of which a 150 nm GaN channel layer was grown further. A 1 nm thick AlN insertion layer was grown on the GaN channel to improve the twodimensional electron gas (2DEG) of the device, followed by the growth of a 20 nm-thick undoped AlGaN barrier layer with Al composition of 25% [19]. Finally, a 2 nm thick GaN cap layer was grown on the surface of the barrier layer for protection.…”

Comparative Analysis of Different Figures of Merit for AlGaN/GaN and Si Surrounding-Gate Field Effect Transistors (SG-FETs)

“…Table 1 and 2 represents the different device parameters and relations used in the present work [13]. Table 3,4,5,and 6 represents the computation of center potential for different channel length (CL), channel height (H), oxide thickness (t ox ), and doping concentration (N d ) respectively. The simulations have been performed using the commercially available Silvaco ATLAS device simulator [16], which is commonly used to characterize the electrical properties of different semiconductor devices.…”