2005
DOI: 10.1109/tmag.2005.854747
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Switching of magnetostrictive micro-dot arrays by mechanical strain

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Cited by 7 publications
(4 citation statements)
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“…According to a relevant work [30], it was found that the tunnel barrier withstands the stress at least up to 1.2 × 10 -3 with nearly no influence of the hard layer magnetization [31].…”
Section: Resultsmentioning
confidence: 99%
“…According to a relevant work [30], it was found that the tunnel barrier withstands the stress at least up to 1.2 × 10 -3 with nearly no influence of the hard layer magnetization [31].…”
Section: Resultsmentioning
confidence: 99%
“…The TMR stack comprises an artificial antiferromagnet (AAF), a PtMn/CoFeB/Ru/CoFeB sandwich structure, which provides the magnetically stable reference layer, a MgO tunneling barrier, and a free layer consisting typically of a double layer which included a 1 nm thick CoFeB thin film and a 5 nm thick CoFeBSi thin film. The CoFeB layer at the MgO interface allowed for a high TMR ratio [1], while the highly magnetostrictive CoFeBSi ensured a high sensitivity to the application of mechanical stress [2]. On the other hand, the thickness of the MgO tunneling barrier was varied, resulting in TMR junctions with different resistance area products ranging from 700 Ohmµm² to 400 kOhmµm².…”
Section: Methodsmentioning
confidence: 99%
“…For all magnetostrictive materials the bulk value can differ from the value for very thin films (< 10 nm), measuring these is a difficult task because the effect is very small, even if the magnetostriction coefficient remains the same. To further investigate thin magnetostrictive films the switching behavior of magnetostrictive micro-dot arrays under the application of mechanical strain was studied (13). These micro-dot arrays are made out of amorphous FeCoBSi with diameters from 1 to 5 µm and had a thickness of 20 nm.…”
Section: Magnetostrictive Thin Filmsmentioning
confidence: 99%