Switching of magnetostrictive micro-dot arrays by mechanical strain

Bootsmann, M.-T.; Dokupil, S.; Quandt, Eckhard; Ivanov, Tzv.; Abedinov, N.; Löhndorf, M.

doi:10.1109/tmag.2005.854747

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…According to a relevant work [30], it was found that the tunnel barrier withstands the stress at least up to 1.2 × 10 -3 with nearly no influence of the hard layer magnetization [31].…”

Section: Resultsmentioning

confidence: 99%

Compositional dependence of magnetostrictive effect in Ta/CoFe(B)/MgO stacks with perpendicular magnetic anisotropy

Ahn

2024

Phys. Scr.

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Magnetostrictive effect in Ta/CoxFe100-x(B)[CoFe(B)]/MgO for alloy compositions spanning Fe-rich (x=20) to Co-rich (x=80) stacks has been studied to investigate the relation between magnetostrictive effect and the onset of perpendicular magnetic anisotropy at Ta/CoFe(B)/MgO interfaces. Interestingly, for each Co composition, a t-dependent crossover between in-plane (ip) and out-of-plane (op) magnetic anisotropy is found at a different CoFe(B) thickness (tcro)—denoted as crossover thickness, which means compositional variations of magnetic properties at the interfaces. By considering the Ta/CoFe(B) and CoFe(B)/MgO interfaces as atomistic volumes with ip and op orbital magnetizations, respectively, the relative ratio of ip to op orbital magnetization in the atomistic volumes is found to be closely related to the dependence of magnetostriction constant (λs) on the Co composition. The findings suggest that the composition dependence of ip and op orbital magnetization at the Ta/CoFe(B)/MgO interfaces plays an important role in controlling its interfacial anisotropy and magnetostrictive effect of the stacks with the interfaces.

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“…According to a relevant work [30], it was found that the tunnel barrier withstands the stress at least up to 1.2 × 10 -3 with nearly no influence of the hard layer magnetization [31].…”

Section: Resultsmentioning

confidence: 99%

Compositional dependence of magnetostrictive effect in Ta/CoFe(B)/MgO stacks with perpendicular magnetic anisotropy

Ahn

2024

Phys. Scr.

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“…The TMR stack comprises an artificial antiferromagnet (AAF), a PtMn/CoFeB/Ru/CoFeB sandwich structure, which provides the magnetically stable reference layer, a MgO tunneling barrier, and a free layer consisting typically of a double layer which included a 1 nm thick CoFeB thin film and a 5 nm thick CoFeBSi thin film. The CoFeB layer at the MgO interface allowed for a high TMR ratio [1], while the highly magnetostrictive CoFeBSi ensured a high sensitivity to the application of mechanical stress [2]. On the other hand, the thickness of the MgO tunneling barrier was varied, resulting in TMR junctions with different resistance area products ranging from 700 Ohmµm² to 400 kOhmµm².…”

Section: Methodsmentioning

confidence: 99%

Magnetostrictive TMR Sensors for Mechanical Measurements

Quandt¹,

Meyners²,

Hofe³

et al. 2009

ECS Trans.

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Magnetostrictive TMR sensors present a unique possibility to integrate highly sensitive strain sensors on micromachined membranes for sophisticated pressure sensors. The gauge factor of such strain sensors was 840. Using them on micromachined membranes an almost linear dependency between the resistance and the applied pressure was found. The resistance change was approximately 1 Ohm/mbar in a pressure range between 0 and 0.08 bar.

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“…For all magnetostrictive materials the bulk value can differ from the value for very thin films (< 10 nm), measuring these is a difficult task because the effect is very small, even if the magnetostriction coefficient remains the same. To further investigate thin magnetostrictive films the switching behavior of magnetostrictive micro-dot arrays under the application of mechanical strain was studied (13). These micro-dot arrays are made out of amorphous FeCoBSi with diameters from 1 to 5 µm and had a thickness of 20 nm.…”

Section: Magnetostrictive Thin Filmsmentioning

confidence: 99%

Magnetoelectronical Sensors for Mechanical Measurements

et al. 2007

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Recently, highly sensitive strain gauges were developed, which are based on TMR (tunnel magnetoresistance) or GMR (giant magnetoresistance) effects combined with the inverse magnetostriction. GMR and TMR structures generally possess a symmetrical characteristic which reflects the switching fields of the soft and hard layers, respectively. This characteristic can be changed by a stress field if the soft layer is replaced by a suitable magnetostrictive layer leading to a stress induced rotation of the magnetostrictive layer with respect to the reference layer. In particular in combination with the TMR effect, this approach illustrates an interesting, highly sensitive mechanism in order to detect mechanical variables with a high spatial resolution as well as an unrivaled high gauge factor. In addition, the feasibility of an integrated fabrication compatible to cost effective fabrication routes using nano-/micro techniques is of great interest e.g. for the automotive industry. In this paper, the basics, the fabrication and the features of magnetoelectronical sensors will be discussed in view of an integrated pressure sensor for automotive applications.

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Switching of magnetostrictive micro-dot arrays by mechanical strain

Cited by 7 publications

References 8 publications

Compositional dependence of magnetostrictive effect in Ta/CoFe(B)/MgO stacks with perpendicular magnetic anisotropy

Compositional dependence of magnetostrictive effect in Ta/CoFe(B)/MgO stacks with perpendicular magnetic anisotropy

Magnetostrictive TMR Sensors for Mechanical Measurements

Magnetoelectronical Sensors for Mechanical Measurements

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