Switching dynamics and charge transport studies of resistive random access memory devices

Long, Branden; Li, Yibo; Mandal, Saptarshi; Jha, Rashmi; Leedy, Kevin D.

doi:10.1063/1.4749809

Cited by 37 publications

(31 citation statements)

References 12 publications

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“…Besides this, microscopic models such as multi-phonon TAT (MTAT) model are often used. The TAT conduction modeling is found to be consistent with some experimental data based on HfOx [54][55][56], TaOx [57] and SiOx [58,59] as depicted in Table 5. Bersuker et al [54] analyzed the conduction mechanism in TiN/HfO2/TiN device by using the statistical multi-phonon trap-assisted tunneling (MTAT) model.…”

Section: Trap-assisted Tunneling (Tat)supporting

confidence: 69%

“…Long et al [56] affirmed the role of Ohmic conduction during LRS in 6 nm thick HfO2-based device. However, the conduction in HRS is found to be governed by combination of both P-F emission and TAT process.…”

Section: Trap-assisted Tunneling (Tat)mentioning

confidence: 99%

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Trap-assisted Tunneling (Tat)supporting

confidence: 69%

Section: Trap-assisted Tunneling (Tat)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…This is because to achieve multiple LRS values in RRAM devices, the compliance current needs to be carefully controlled. The LRS value of RRAM device is very sensitive to the compliance current used to set the device [14]. A lower compliance current leads to the formation of smaller dimension filaments resulting in a higher resistance in LRS while a higher compliance current leads to the formation of bigger filament resulting in a lower resistance in LRS of the device [14].…”

Section: Rram Power Analysismentioning

confidence: 99%

“…The LRS value of RRAM device is very sensitive to the compliance current used to set the device [14]. A lower compliance current leads to the formation of smaller dimension filaments resulting in a higher resistance in LRS while a higher compliance current leads to the formation of bigger filament resulting in a lower resistance in LRS of the device [14]. Different compliance currents can be achieved by connecting a transistor with RRAM device and applying an appropriate gate voltage to limit the maximum current through the RRAM device, shown in Fig.…”

Section: Rram Power Analysismentioning

confidence: 99%

Content-aware encoding for improving energy efficiency in multi-level cell resistive random access memory

Hajimiri

Mishra

Bhunia

et al. 2013

2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

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Memory is an integral and important component of both general-purpose and embedded systems. It is widely acknowledged that energy of the memory structure is a major contributor in overall system energy. Recent advances with emerging non-volatile memory (NVM) technologies can potentially alleviate the issue of memory leakage power. However, they introduce new challenges and opportunities for dynamic power management in memory. In this paper, we consider resistive random access memory (RRAM), a promising NVM technology, and observe that a specific feature of the memory, namely, its multi-level cell (MLC) structure, can be used to significantly reduce its read access energy. Unlike conventional CMOS static random access memory (SRAM), the read access energy in RRAM largely depend on the stored content. Based on this observation, we present an efficient encoding technique for improving the energy efficiency for multi-level cell RRAM. Our simulation results with benchmark applications demonstrate an order-of-magnitude energy reduction with modest area overhead.

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Enhanced Switching Stability in Forming‐Free SiN_x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

Jiang

Gao

Yang

et al. 2018

Adv Elect Materials

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a high forming voltage may lead to current overshoot effect. [21,22] High power consumption is also a severe problem led by high forming voltage. Moreover, transistors which are connected to RRAM cells cannot endure such a high voltage and may cause problems of devices size scaling. Therefore, it is necessary to explore RRAM devices which have forming-free RS characteristic.There are many kinds of methods to deposit a forming-free film, and there are two kind of common types: One is by simply reducing the thickness of film or inserting a metal layer for reducing the overall insulation of the film, and make the forming voltage reduce to a very low level (approximate to the Set voltage); another is by using a substoichiometry film, because there are plenty of defects, the film will initially be in low resistance state (LRS). [15] But both of them are not perfect: the first one cannot ensure the position of generating defects thus the CCs have a random location and shape; the second one cannot ensure the quality of films and the initial defects are in a state of random distribution, the yield and reliability is not very good. Besides, in the present study of SiN x -based RRAM devices, due to the influence of preparation process (such as plasma enhanced chemical vapor deposition (PECVD)), there are always hydrogen atoms in the films. But unfortunately, the specific role of hydrogen atoms is still unclear and has some different kinds of comprehensions from scholars. [25][26][27] It will be better if we can exclude hydrogen atoms from the films. In this situa tion, we need a specific method that can solve all the questions above.In our previous work, we have investigated the effect of nitrogen-accommodation ability of electrodes in SiN x -based RS devices. [28] We found that tantalum has great nitrogenaccommodation ability to be the electrode. Besides, we have investigated the influence of nitrogen concentration on selfcompliance RS in Ta/SiN x /Pt RRAM devices and built a reliable RS model. [29] It seems that if we decrease the value of x, there will be more defects in the film. So in this work, we deposit SiN x films using RF sputtering to prevent the effect of hydrogen ions and fabricate forming-free RRAM devices with reliable switching stability successfully. To solve the problems of forming-free devices mentioned above, we try to improve the quality of films by increasing deposit temperature. But with the In this study, forming-free and reliable resistive switching characteristics are demonstrated by using Pt doping in a stacked structure of SiN x resistive random access memory cells. Pt nanoparticles are embedded in situ and the size of them are about 1-2 nm. It ensures the potential of size scaling for the devices. Compared to those without Pt doping, a more reliable switching stability with better endurance and retention characteristics is obtained. The operating voltages and currents are low so that it is suitable for low power consumption applications. Films deposited at higher temperature show better compact...

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Switching dynamics and charge transport studies of resistive random access memory devices

Cited by 37 publications

References 12 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Content-aware encoding for improving energy efficiency in multi-level cell resistive random access memory

Enhanced Switching Stability in Forming‐Free SiN_x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

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Switching dynamics and charge transport studies of resistive random access memory devices

Cited by 37 publications

References 12 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Content-aware encoding for improving energy efficiency in multi-level cell resistive random access memory

Enhanced Switching Stability in Forming‐Free SiNx Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

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Enhanced Switching Stability in Forming‐Free SiN_x Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure