Switching behaviour of fast high voltage SiC pn-diodes

Mitlehner, H.; Friedrichs, Peter; Peters, Dethard; Schörner, Reinhold; Weinert, Ulrich; Weis, B.; Stephani, D.

doi:10.1109/ispsd.1998.702652

Cited by 20 publications

(20 citation statements)

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“…In another case, a space-charge-limited current flow mechanism due to deep traps is also used to explain the dependence of the reverse current on reverse bias (J R ~ V R°, where 2 < n <5) . The reverse recovery current waveforms of both epitaxial and implanted junction rectifiers have an interesting temperature dependence that has not been seen in Si devices (Peters, et al 1997;Mitlehner, et al 1998). In Fig.…”

Section: Chow 117mentioning

confidence: 88%

“…Obviously, material defects, such as screw dislocations, play a role in determining the reverse current (Neudeck, et al 1999). With the improvement in material quality, fairly low reverse current densities (< 10 s cm 2 ) have been observed, at least for small area devices (Takemura, et al 1997;Mitlehner, et al 1998;Rottner, et al 1998;. Fig.…”

Section: Chow 117mentioning

confidence: 99%

“…7.20. To model the actual forward I-V characteristics of SiC pn junction rectifiers Peters, et al 1997;Takemura, et al 1997;Mitlehner, et al 1998;Rottner, et al 1998;Li, et al 1999), particularly those fabricated with planar implanted anode or cathode junctions, it has been found that the theory established for silicon presented above is often inadequate. Modifications to the silicon equations are needed to account for the new phenomena observed.…”

Section: Andmentioning

confidence: 99%

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High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Section: Chow 117mentioning

confidence: 88%

Section: Chow 117mentioning

confidence: 99%

Section: Andmentioning

confidence: 99%

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High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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show abstract

“…Both point and structural defects still remain in the implanted regions, although postimplantation annealing at 1700 C was employed to remove defects. Hence, the implantation-induced defects remaining in n -epilayer near the junction act as a lifetime killer for minority carriers, resulting in very fast switching time [13].…”

Section: P-n Junction Characteristicsmentioning

confidence: 99%

“…A positive temperature coefficient of breakdown voltage is one of the most essential requirements for reliable power devices. To our knowledge, only a few reports on this characteristics for SiC high-voltage p-n diodes by implantation have been published [13]. It has not been fully understood how the implants and/or their profiles affect the blocking characteristics.…”

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confidence: 99%